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Device scaling

Pushing carbon nanotube circuits below the 10-nm node

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Carbon nanotube transistors with high performance and integration density can be created using a full-contact structure to scale the nanotube–electrode contact length.

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Fig. 1: Scaling carbon nanotube FETs.

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  1. imec, Leuven, Belgium

    Rongmei Chen

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  1. Rongmei Chen
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Correspondence to Rongmei Chen.

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Chen, R. Pushing carbon nanotube circuits below the 10-nm node. Nat Electron 6, 473–474 (2023). https://doi.org/10.1038/s41928-023-00986-0

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