Gate dielectrics with an equivalent oxide thickness of only one nanometre can be grown on two-dimensional semiconductors with the help of a monolayer molecular crystal.
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Xie, Z., Liu, Y. & Liao, L. Ultrathin dielectrics for 2D devices. Nat Electron 2, 559–560 (2019). https://doi.org/10.1038/s41928-019-0344-9
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DOI: https://doi.org/10.1038/s41928-019-0344-9
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