Tellurium thin films evaporated at cryogenic temperatures facilitate the realization of high performance wafer-scale flexible p-type field-effect transistors and various types of logic gates.
References
Myny, K. Nat. Electron. 1, 30–39 (2018).
Hussain, A. M. & Hussain, M. M. Adv. Mater. 28, 4219–4249 (2016).
Tang, J. et al. Nat. Electron. 1, 191–196 (2018).
Park, J. W., Kang, B. H. & Kim, H. J. Adv. Func. Mater. https://doi.org/10.1002/adfm.201904632 (2019).
Kim, Y.-H. et al. Nature 489, 128–132 (2012).
Wang, Z., Nayak, P. K., Caraveo-Frescas, J. A. & Alshareef, H. N. Adv. Mater. 28, 3831–3892 (2016).
Manzeli, S., Ovchinnikov, D., Pasquier, D., Yazyev, O. V. & Kis, A. Nat. Rev. Mater. 2, 17033 (2017).
Giri, G. et al. Nature 480, 504–508 (2011).
Zhao, C. et al. Nat. Nanotechnol. https://doi.org/10.1038/s41565-019-0585-9 (2019).
Wang, Y. et al. Nat. Electron. 1, 228–236 (2018).
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Chung, S., Lee, T. Towards flexible CMOS circuits. Nat. Nanotechnol. 15, 11–12 (2020). https://doi.org/10.1038/s41565-019-0596-6
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DOI: https://doi.org/10.1038/s41565-019-0596-6
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