A high-quality tunnelling-recombination layer composed of a boron- and phosphorus-doped polycrystalline silicon (poly-Si) stack is obtained by suppressing dopant interdiffusion. Strong adsorption of the hole-transport layer on the poly-Si substrate enables efficient charge-carrier transport and extraction, enabling the realization of a perovskite/tunnel oxide passivating contact tandem solar cell with 29.2% efficiency.
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References
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This is a summary of: Zheng, J. et al. Polycrystalline silicon tunnelling recombination layers for high-efficiency perovskite/tunnel oxide passivating contact tandem solar cells. Nat. Energy https://doi.org/10.1038/s41560-023-01382-w (2023).
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Tunnelling-recombination layer made of polycrystalline silicon for perovskite tandem photovoltaics. Nat Energy 8, 1190–1191 (2023). https://doi.org/10.1038/s41560-023-01383-9
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DOI: https://doi.org/10.1038/s41560-023-01383-9
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