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Nanowire transistors made easy

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A CMOS-capable silicon nanowire transistor has been fabricated without any junctions, simplifying its manufacture and improving its performance relative to traditional devices.

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Figure 1: Cross sections and operation principles for an n-type junction FET and a junctionless FET.

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Authors and Affiliations

  1. Adrian M. Ionescu is with the Nanolectronic Devices Laboratory (Nanolab), Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland. adrian.ionescu@epfl.ch,

    Adrian M. Ionescu

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  1. Adrian M. Ionescu
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Ionescu, A. Nanowire transistors made easy. Nature Nanotech 5, 178–179 (2010). https://doi.org/10.1038/nnano.2010.38

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