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Whither the oxide interface

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Interfaces formed by transition-metal oxide materials offer a tremendous opportunity for fundamental as well as applied research. Yet, as exciting as these opportunities are, several challenges remain.

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Figure 1: Examples of control parameters available at oxide interfaces.
Figure 2: Designing oxide interfaces.
Figure 3: Schematic of a 'Mott transistor' with oxide channel material (white) and top gate and substrate (blue), showing the electronic density of states (DOS) calculated from single-site dynamical mean field theory.

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Authors and Affiliations

  1. J. Chakhalian is in the Department of Physics, University of Arkansas, Fayetteville, Arkansas 70701, USA,

    J. Chakhalian

  2. A. J. Millis is in the Department of Physics, Columbia University, 538 West 120th Street, New York 10027, USA,

    A. J. Millis

  3. J. Rondinelli is in the Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, USA,

    J. Rondinelli

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  1. J. Chakhalian
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  2. A. J. Millis
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  3. J. Rondinelli
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Correspondence to J. Chakhalian.

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Chakhalian, J., Millis, A. & Rondinelli, J. Whither the oxide interface. Nature Mater 11, 92–94 (2012). https://doi.org/10.1038/nmat3225

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