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Perpendicular all the way

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A conventional material used in magnetic tunnel junctions with in-plane magnetization can also be magnetized perpendicularly, offering new possibilities for high-performance memory and logic circuits.

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Figure 1: A perpendicularly magnetized magnetic tunnel junction.

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Authors and Affiliations

  1. Andrew D. Kent is in the Department of Physics, New York University, 4 Washington Place, New York, New York 10003. andy.kent@nyu.edu,

    Andrew D. Kent

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  1. Andrew D. Kent
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Competing interests

The author declares competing financial interests: Spin Transfer Technologies, LLC is developing orthogonal spin-transfer MRAM under a license from New York University (NYU). The author may receive a portion of NYU's license income.

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Kent, A. Perpendicular all the way. Nature Mater 9, 699–700 (2010). https://doi.org/10.1038/nmat2844

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