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Perovskites

Is the ultimate memory in sight?

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With silicon microelectronics approaching fundamental limits, new concepts for high-density memory devices are sought. The individual switching of dislocations in oxides may offer just the right alternative.

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Figure 1: Switching of single dislocations.

References

  1. Szot, K., Speier, W., Bihlmayer, G. & Waser, R. Nature Mater. 5, 312–320 (2006).

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Authors and Affiliations

  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, 27695, North Carolina, USA

    Angus Kingon

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  1. Angus Kingon
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Kingon, A. Is the ultimate memory in sight?. Nature Mater 5, 251–252 (2006). https://doi.org/10.1038/nmat1623

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