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The photoelectrochemical effect at a p-GaP electrode

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Abstract

Increasing attention is being focused on the properties and behaviour of p-type semiconductor electrodes. For instance, p-type GaP electrodes have been used in photoelectrochemical cells for water splitting1, CO2 reduction2 and N2 fixation3. We report here the quantum efficiency–potential characteristics for H2 evolution at an irradiated p-GaP electrode. The curves have been evaluated using a Schottky barrier model of the semiconductor/electrolyte interface4.

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References

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Authors and Affiliations

  1. Physics Department, The University of New South Wales, Kensington, NSW, 2033, Australia

    J. F. McCann

  2. Chemistry Department, University of Texas at Austin, Austin, Texas, 78712

    L. J. Handley

Authors
  1. J. F. McCann
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  2. L. J. Handley
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McCann, J., Handley, L. The photoelectrochemical effect at a p-GaP electrode. Nature 283, 843–845 (1980). https://doi.org/10.1038/283843a0

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  • DOI: https://doi.org/10.1038/283843a0

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