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Effects of deposition and annealing conditions on the structure and electrical properties of LPCVD silicon thin films

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Abstract

Deposition temperature and annealing conditions have pronounced effects on the structure and electrical properties of LPCVD silicon thin films. Films grown at 580°C are amorphous whereas those grown at 620°C are microcrystalline. All thin films are subjected to phosphorous diffusion followed by different annealing treatments. Annealing of amorphous films at 1000°C results in large grains with no favoured orientation and with a relatively high mobility value. Annealing treatment at 1000°C of the microcrystalline sample results in moderate grain growth with a relatively low mobility which presumably is due to some favoured grain orientation.

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Authors and Affiliations

  1. Department of Metallurgical and Materials Engineering, Indian Institute of Technology, Kharagpur -, 721 302, India

    S. Das

  2. Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA

    R. Shriram

  3. Department of Electrical Engineering, Indian Institute of Technology, Madras -, 600 036, India

    K. N. Bhat & P. R. S. Rao

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  1. S. Das
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  2. R. Shriram
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  3. K. N. Bhat
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  4. P. R. S. Rao
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Das, S., Shriram, R., Bhat, K.N. et al. Effects of deposition and annealing conditions on the structure and electrical properties of LPCVD silicon thin films. Journal of Materials Science 35, 4743–4746 (2000). https://doi.org/10.1023/A:1004867410373

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  • DOI: https://doi.org/10.1023/A:1004867410373

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