Abstract
ZnSe layers have been grown by a low temperature (∼65 °C) electrochemical deposition technique in an aqueous medium. The resulting thin films have been characterized using X-ray diffraction (XRD) and a photoelectrochemical (PEC) cell for determination of the bulk properties and electrical conductivity type. XRD patterns indicate the growth of ZnSe layers with (1 1 1) as the preferred orientation. PEC studies show p-type semiconducting properties for the as deposited layers and n-type ZnSe can be produced by appropriate doping. Annealing at 250 °C for 15 min improves the crystallinity of the layers and the photoresponse of the ZnSe/electrolyte junction. © 1998 Kluwer Academic Publishers
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Samantilleke, A.P., Boyle, M.H., Young, J. et al. Electrodeposition of n-type and p-type ZnSe thin films for applications in large area optoelectronic devices. Journal of Materials Science: Materials in Electronics 9, 289–290 (1998). https://doi.org/10.1023/A:1008876722944
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DOI: https://doi.org/10.1023/A:1008876722944