Abstract
We propose a novel superluminescent diode (SLD) with a quantum dot (QD) active layer, which should give a wider output spectrum than a conventional quantum well SLD. The device makes use of inhomogeneous broadness of gain spectrum resulting from size inhomogeneity of self-assembled quantum dots grown by Stranski– Krastanow mode. Taking a design made out in the InxGa1-xAs/GaAs system for example, the spectrum characteristics of the device are simulated realistically, 100–200 nm full width of half maximum of output spectrum can be obtained. The dependence of the output spectrum on In composition, size distribution and injection current of the dots active region is also elaborated.
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Sun, Zz., Ding, D., Gong, Q. et al. Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum. Optical and Quantum Electronics 31, 1235–1246 (1999). https://doi.org/10.1023/A:1007030119338
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DOI: https://doi.org/10.1023/A:1007030119338