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Enhanced output efficiency of GaN-based light-emitting diodes by silver nanowires-induced localized surface plasmon

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Abstract

The authors investigated the localized surface plasmon (LSP)-enhanced light output efficiency of GaN-based light-emitting diodes (LEDs) fabricated with indium-tin-oxide (ITO)/silver nanowire (AgNWs) transparent conductive electrodes (TCEs). The ITO/AgNWs TCE yielded optical transmittance of 91.7% at a wavelength of 450 nm, a sheet resistance of 16.4 Ω/sq, and a specific contact resistance of 1.3 × 10−3 Ωcm2. Notably, the LEDs fabricated with ITO/AgNWs TCE showed 51.5% greater output power than the reference LEDs fabricated with ITO TCE. This could be due to the combined effects of higher optical transparency and, more importantly, vertical out-coupling of the localized surface plasmon (LSP) resonance with the trapped wave-guided mode of light.

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Author notes

  1. Munsik Oh

    Present address: Seoul Semiconductor, Ansan, 15429, Republic of Korea

Authors and Affiliations

  1. Department of Semiconductor Science and Technology, Jeonbuk National University, Jeonju, 54896, Republic of Korea

    Munsik Oh & Hyunsoo Kim

  2. Center of Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea

    Hyeon Jun Jeong & Mun Seok Jeong

Authors
  1. Munsik Oh
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  2. Hyeon Jun Jeong
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  3. Mun Seok Jeong
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  4. Hyunsoo Kim
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Correspondence to Hyunsoo Kim.

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Oh, M., Jeong, H.J., Jeong, M.S. et al. Enhanced output efficiency of GaN-based light-emitting diodes by silver nanowires-induced localized surface plasmon. J. Korean Phys. Soc. 83, 365–371 (2023). https://doi.org/10.1007/s40042-023-00830-w

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