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A new field-assisted annealing approach for advanced Cu-Zr Alloy metallization

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Abstract

A new field-assisted annealing approach for Cu-Zr alloy metallization is proposed and investigated. Cu-Zr/SiO2/Si samples were vacuum-annealed at pressure of 2 × 10−3 Pa with (−20 V) and without field-assisted annealing for an hour in 250°C–400°C temperature range. Based on the XRD, TEM, XPS, and resistivity measurement results, we conclude that the dragging force for Zr atoms in field-assisted annealing samples to the interface shall be larger than that of samples without field-assisted annealing. As a consequence, by low concentration alloy atoms adding and FAA processing, the low Cu alloy film resistivity and thin self-forming barrier layer can be simultaneously obtained at lower temperature.

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Authors and Affiliations

  1. College of Information and Communication Engineering, Harbin Engineering University, 150001, Harbin, China

    Ying Wang & Fei Cao

  2. Key Laboratory of Superlight Materials and Surface Technology (Harbin Engineering University), Ministry of Education, 150001, Harbin, China

    Mi-lin Zhang

Authors
  1. Ying Wang
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  2. Fei Cao
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  3. Mi-lin Zhang
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Wang, Y., Cao, F. & Zhang, Ml. A new field-assisted annealing approach for advanced Cu-Zr Alloy metallization. Electron. Mater. Lett. 8, 507–510 (2012). https://doi.org/10.1007/s13391-012-2065-3

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  • DOI: https://doi.org/10.1007/s13391-012-2065-3

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