Abstract
We present physical properties of ZnO nanorods irradiated with slow highly charged Bismuth (Bi74+) ions of different fluences. Samples were grown on Si substrates by hydrothermal technique at 90 °C and were found to be randomly distributed. Room temperature Raman measurements showed the decrease and the blue shift of \( {E}_{2}^{\text{high}} \) mode of irradiated samples, suggesting the suppression of crystallinity and the growth of stress. Signature of dynamic annealing (defect-annihilation) of radiation defects at higher doses was observed. Room temperature photoluminescence studies showed similar features in two regions: ultraviolet and broad visible regions. Both regions were unaffected with increased ion fluences. UV emission was found to be related to the FX-2LO transition and visible emission to the intrinsic defects of the samples. X-ray emissions detected in ion-surface interactions confirmed the formation and the decay of hollow Bi atoms during their approach to the sample surface.
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Acknowledgments
We are thankful to S. Nozaki and S. Sarangi for preparing samples and fruitful discussion. S. Das acknowledges the financial support received from the University of Electro-Communications (UEC) under the UEC-Postdoctoral Fellowship program.
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Das, S., Ohashi, H. & Nakamura, N. Study of Interactions of Slow Highly Charged Bismuth Ions with ZnO Nanorods. Trans Indian Inst Met 69, 1087–1096 (2016). https://doi.org/10.1007/s12666-015-0625-6
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DOI: https://doi.org/10.1007/s12666-015-0625-6