Abstract
In this work, through modeling we propose how the choice of the TCO material, its texturing and optimization of band gap of a-Si:H layers help to increase the efficiency of a-Si:H solar cells. While selecting plane and textured indium tin oxide (ITO) and zinc oxide (ZnO) as TCOs, the solar cell parameters and performance are examined as a function of band gap of different a-Si:H layers. The optimum band gap values of 2.1 eV, 1.9 eV and 1.85 eV are obtained for p, i and n-layers of a-Si:H with maximum efficiencies of ~ 15.5 % and 17.7 % using plane ITO and ZnO contacts respectively. Interestingly, the conversion efficiency is further increased to ~ 16.3 % and 18.6 % when textured ITO and textured ZnO are used as TCOs. Moreover the higher efficiencies with ZnO-based contact than ITO-based contact can be explained due to slightly higher drift velocity of holes nearer to the junction and little improved optical properties which may also attributes to the enhanced trapping of the light. These results are very encouraging and may help in developing a-Si:H based solar cell technology for thin films.
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References
Chopra KL, Paulson PD, Dutta V (2004) Thin-film solar cells: an overview. Prog inPhotovoltics: Res Appl 12:69–92
Guha S (1998) Amorphous silicon alloy photovoltaic technology and applications. Renew Energy 15:189–194
Street RA (1991). In: Cahn RW, Davis EA, Ward IM (eds) Hydrogenated Amorphous Silicon. Cambridge Solid State Science Series. Cambridge University Press
Alpuim P, Samantilleke A, Marins E, Oliveira F, Cerqueira MF, Rebouta L, Stefanov S, Chiussi S, Serra C, Bourée JE (2010) Amorphous silicon thin-film solar cells deposited on flexible substrates using different zinc oxide layers. Phys Status Solidi C 7:1061–64
Kabir MI, Shahahmadi SA, Lim V, Zaidi S, Sopian K, Amin N (2012) Amorphous silicon single-junction thin-film solar cell exceeding 10 % efficiency by design optimization. Inter J Photoenergy:460919
Kroll U, Bucher C, Benagli S, Schönbächler I, Meiera J, Shah A, Ballutaud J, Howling A, Hollenstein Ch, Büchel A, Poppeller M (2004) High-efficiency p-i-n a-Si:H solar cells with low boron cross-contamination prepared in a large-area single-chamber PECVD reactor. Thin Solid Films 451–452:525–530
Green MA, Emery K, Hishikawa Y, Warta W, Dunlop ED (2014) Solar cell efficiency table (version 43). Prog InPhotovoltics: Res Appl 22:1–9
Liao X, Du W, Yang X, Povolny H, Xiang X, Deng X, Sun K (2006) Nanostructure in the p-layer and its impacts on amorphous silicon solar cells. J Non-Cryst Solids 352:1841–1846
Meier J, Kroll U, Vallat-Sauvain E, Spitznagel J, Graf U, Shah A (2004) Amorphous solar cells, the micromorph concept and the role of VHF-GD deposition technique. Sol Energy 77:983–993
Wada T, Kondo M, Matsuda A (2002) Improvement of V oc using carbon added microcrystalline Si p-layer in microcrystalline Si solar cells. Sol Energy Mater Sol Cell 74:533–38
Muller J, Rech B, Springer J, Vanecek M (2004) TCO and light trapping in silicon thin film solar cells. Sol Energy 77:917–930
Baek S, Lee JC, Lee YJ, Iftiquar SM, Kim Y, Park J, Yi J (2012) Interface modification effect between p-type a-SiC:H and ZnO:Al p-i-n amorphous silicon solar cells. Nanoscale Res Lett 7:81
Morkoc H, Ozgur U (2008) Zinc oxide: fundamentals, materials and device technology. WILEY-VCH Verlag GmbH & Co. kGaA
Tan H, Sivec L, Yan B, Santbergen R, Zeman M, Smets AHM (2013) Improved light trapping in microcrystalline silicon solar cells by plasmonic back reflector with broad angular scattering and low parasitic absorption. Appl Phys Lett 102:153902
Zeman M, Isabella O, Jäger K, Santbergen R, Solntsev S, Topic M, Krc J (2012) Advanced light management approaches for thin-film silicon solar cells. Energy Proc 15:189–199
Berginski M, Hüpkes J, Reetz W, Rech B, Wuttig M (2008) Recent development on surface-textured ZnO:Al films prepared by sputtering for thin-film solar cell application. Thin Solid Films 516:5836–41
Dwivedi N, Kumar S, Bisht A, Patel K, Sudhakar S (2013) Simulation approach for optimization of device structure and thickness of HIT solar cells to achieve ~ 27 % efficiency. Sol Energy 88:31–41
Stangle R, Kriegel M, Schaffarzik D, Schmidt M (2005) AFORS-HET Version 2.1 a numerical computer program for simulation of (thin film) heterojunction solar cells. www.hmi.de/bereiche/SE/SE1/projects/aSicSi/AFORS-HET
Dwivedi N, Kumar S, Singh S, Malik HK (2012) Oxygen modified diamond-like carbon as window layer for amorphous silicon solar cells. Sol Energy 86:220–230
Dwivedi N, Kumar S, Malik HK (2012) Studies of pure and nitrogen-incorporated hydrogenated amorphous carbon thin films and their possible application for amorphous silicon solar cells. J Appl Phys 111:014908
Sharma M, Kumar S, Dwivedi N, Juneja S, Gupta AK, Sudhakar S, Patel K (2013) Optimization of band gap, thickness and carrier concentrations for the development of efficient microcrystalline silicon solar cells: A theoretical approach. Sol Energy 97:176–185
Dao VA, Heo J, Choi H, Kim Y, Park S, Jung S, Lakshminarayan N, Yi J (2010) Simulation and study of the influence of the buffer intrinsic layer, back surface field, densities of interface defects, resistivity of p-type silicon substrate and transparent conductive oxide on heterojunction with intrinsic thin-layer (HIT) solar cell. Sol Energy 84:777–83
Zhao L, Zhou CL, Li HL, Diao HW, Wang WJ (2008) Design optimization of bifacial HIT solar cells on p-type silicon substrates by simulation. Sol Energy Mater Sol Cell 92:673–81
Zhao L, Li H L, Zhou CL, Diao HW, Wang WJ (2009) Optimized resistivity of p-type Si substrate for HIT solar cell with Al back surface field by computer simulation. Sol Energy 83:812–16
Singh S, Kumar S, Dwivedi N (2012) Band gap optimization of p–i–n-layers of a-Si:H by computer aided simulation for development of efficient cell. Sol Energy 86:1470–1476
Van Sark WG, Korte L, Roca F (2012) Physics and technology of amorphous-crystalline heterostructure silicon solar cells. Springer-Verlag Berl, Heidelberg
Pokatilov EP, Nika DL, Balandin AA (2006) Built-in field effect on the electron mobility in AlN / GaN / AlN quantum wells. Appl phys lett 89:113508
Schiff EA (2003) Low-mobility solar cells: a device physics primer with application to amorphous silicon. Sol Energy Mater Sol Cells 78:567–595
Ginley DS, Perkins JD (2010) Transparent conductors. In: Handbook of transparent conductors. Springer, US
Hongsingthong A, Krajangsang T, Yunaz IA, Miyajima S, Konagai M (2010) ZnO films with very high haze value for use as front transparent conductive oxide films in thin film silicon solar cells. Japan J Appl Phys 3:051102
Alkaya A, Kaplan R, Canbolat H, Hegedus SS (2009) A comparison of fill factor and recombination losses in amorphous silicon solar cells on ZnO and SnO 2. Renew Energy 34:1595–99
Major S, Kumar S, Bhatnagar M, Chopra KL (1986) Effect of hydrogen plasma treatment on transparent conducting oxides. Appl Phys Lett 49:394
Gordon RG (1996) Preparation and properties of transparent conductors. Mater Res Soc Symp Proc 426:419–429
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Sharma, M., Chaudhary, D., Dwivedi, N. et al. Simulating the Role of TCO Materials, their Surface Texturing and Band Gap of Amorphous Silicon Layers on the Efficiency of Amorphous Silicon Thin Film Solar Cells. Silicon 9, 59–68 (2017). https://doi.org/10.1007/s12633-015-9331-6
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DOI: https://doi.org/10.1007/s12633-015-9331-6