Abstract
Two-dimensional (2D) materials have recently provided a new perspective on optoelectronics because of their unique layered structure and excellent physical properties. However, their potential use as optoelectric devices has been limited by the trade-off between photoresponsivity and response time. Here, based on a vertically stacked atomically thin p-n junction, we propose a gap-mode plasmon structure that simultaneously enables enhanced responsivity and rapid photodetection. The atomically thin 2D materials act as a spacer for enhancing the gap-mode plasmons, and their short transit length in the vertical direction allows fast photocarrier transport. We demonstrate a high responsivity of up to 8.67 A/W with a high operation speed that exceeds 35 MHz under a 30 nW laser power. Spectral photocurrent, absorption, and a numerical simulation are used to verify the effectiveness of the gap-mode plasmons in the device. We believe that the design strategy proposed in this study can pave the way for a platform to overcome the trade-off between responsivity and response time.
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Acknowledgement
This work was supported by the National Research Foundation of Korea (NRF) through Basic Research Program (No. 2019R1A2C2009171) and Creative Materials Discovery Program (No. 2016M3D1A1900035).
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Atomically thin heterostructure with gap-mode plasmon for overcoming trade-off between photoresponsivity and response time
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Lee, K.J., Park, C., Jin, H.J. et al. Atomically thin heterostructure with gap-mode plasmon for overcoming trade-off between photoresponsivity and response time. Nano Res. 14, 1305–1310 (2021). https://doi.org/10.1007/s12274-020-3154-5
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DOI: https://doi.org/10.1007/s12274-020-3154-5