Abstract
In this paper, we propose a novel construction of silicon nanowire (SiNW) negative-AND (NAND) logic gates on bendable plastic substrates and describe their electrical characteristics. The NAND logic gates with SiNW channels are capable of operating with a supply voltage as low as 0.8 V, with switching and standby power consumption of approximately 1.1 and 0.068 nW, respectively. Superior electrical characteristics of each SiNW transistor, including steep subthreshold slopes, high I on/off ratio, and symmetrical threshold voltages, are the major factors that enable nanowatt-range power operation of the logic gates. Moreover, the mechanical bendability of the logic gates indicates that they have good and stable fatigue properties.
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Yun, J., Lee, M., Jeon, Y. et al. Nanowatt power operation of silicon nanowire NAND logic gates on bendable substrates. Nano Res. 9, 3656–3662 (2016). https://doi.org/10.1007/s12274-016-1235-2
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DOI: https://doi.org/10.1007/s12274-016-1235-2