Nano Research

, Volume 2, Issue 2, pp 167–175

Theory and practice of “Striping” for improved ON/OFF Ratio in carbon nanonet thin film transistors

Open AccessResearch Article

DOI: 10.1007/s12274-009-9013-z

Cite this article as:
Pimparkar, N., Cao, Q., Rogers, J.A. et al. Nano Res. (2009) 2: 167. doi:10.1007/s12274-009-9013-z

Abstract

A new technique to reduce the influence of metallic carbon nanotubes (CNTs)—relevant for large-scale integrated circuits based on CNT-nanonet transistors—is proposed and verified. Historically, electrical and chemical filtering of the metallic CNTs have been used to improve the ON/OFF ratio of CNT-nanonet transistors; however, the corresponding degradation in ON-current has made these techniques somewhat unsatisfactory. Here, we abandon the classical approaches in favor of a new approach based on relocation of asymmetric percolation threshold of CNT-nanonet transistors by a technique called “striping”; this allows fabrication of transistors with ON/OFF ratio >1000 and ON-current degradation no more than a factor of 2. We offer first principle numerical models, experimental confirmation, and renormalization arguments to provide a broad theoretical and experimental foundation of the proposed method.

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Keywords

NanonetCarbon nanotubeflexible electronicsthin film transistors
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Copyright information

© Tsinghua University Press and Springer Berlin Heidelberg 2009

Authors and Affiliations

  1. 1.School of Electrical and Computer EngineeringPurdue UniversityWest LafayetteUSA
  2. 2.Department of ChemistryUniversity of IllinoisUrbanaUSA
  3. 3.Materials and Science EngineeringUniversity of IllinoisUrbanaUSA
  4. 4.Electrical and Computer EngineeringUniversity of IllinoisUrbanaUSA
  5. 5.Beckman InstituteUniversity of IllinoisUrbanaUSA
  6. 6.Frederick and Seitz Materials Res. LabUniversity of IllinoisUrbanaUSA