Nano Research

, Volume 2, Issue 2, pp 167–175

Theory and practice of “Striping” for improved ON/OFF Ratio in carbon nanonet thin film transistors


  • Ninad Pimparkar
    • School of Electrical and Computer EngineeringPurdue University
  • Qing Cao
    • Department of ChemistryUniversity of Illinois
    • Department of ChemistryUniversity of Illinois
    • Materials and Science EngineeringUniversity of Illinois
    • Electrical and Computer EngineeringUniversity of Illinois
    • Beckman InstituteUniversity of Illinois
    • Frederick and Seitz Materials Res. LabUniversity of Illinois
    • School of Electrical and Computer EngineeringPurdue University
Open AccessResearch Article

DOI: 10.1007/s12274-009-9013-z

Cite this article as:
Pimparkar, N., Cao, Q., Rogers, J.A. et al. Nano Res. (2009) 2: 167. doi:10.1007/s12274-009-9013-z


A new technique to reduce the influence of metallic carbon nanotubes (CNTs)—relevant for large-scale integrated circuits based on CNT-nanonet transistors—is proposed and verified. Historically, electrical and chemical filtering of the metallic CNTs have been used to improve the ON/OFF ratio of CNT-nanonet transistors; however, the corresponding degradation in ON-current has made these techniques somewhat unsatisfactory. Here, we abandon the classical approaches in favor of a new approach based on relocation of asymmetric percolation threshold of CNT-nanonet transistors by a technique called “striping”; this allows fabrication of transistors with ON/OFF ratio >1000 and ON-current degradation no more than a factor of 2. We offer first principle numerical models, experimental confirmation, and renormalization arguments to provide a broad theoretical and experimental foundation of the proposed method.


NanonetCarbon nanotubeflexible electronicsthin film transistors
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© Tsinghua University Press and Springer Berlin Heidelberg 2009