Nano Research

, Volume 2, Issue 2, pp 167–175

Theory and practice of “Striping” for improved ON/OFF Ratio in carbon nanonet thin film transistors

Authors

  • Ninad Pimparkar
    • School of Electrical and Computer EngineeringPurdue University
  • Qing Cao
    • Department of ChemistryUniversity of Illinois
    • Department of ChemistryUniversity of Illinois
    • Materials and Science EngineeringUniversity of Illinois
    • Electrical and Computer EngineeringUniversity of Illinois
    • Beckman InstituteUniversity of Illinois
    • Frederick and Seitz Materials Res. LabUniversity of Illinois
    • School of Electrical and Computer EngineeringPurdue University

DOI: 10.1007/s12274-009-9013-z

Abstract

A new technique to reduce the influence of metallic carbon nanotubes (CNTs)—relevant for large-scale integrated circuits based on CNT-nanonet transistors—is proposed and verified. Historically, electrical and chemical filtering of the metallic CNTs have been used to improve the ON/OFF ratio of CNT-nanonet transistors; however, the corresponding degradation in ON-current has made these techniques somewhat unsatisfactory. Here, we abandon the classical approaches in favor of a new approach based on relocation of asymmetric percolation threshold of CNT-nanonet transistors by a technique called “striping”; this allows fabrication of transistors with ON/OFF ratio >1000 and ON-current degradation no more than a factor of 2. We offer first principle numerical models, experimental confirmation, and renormalization arguments to provide a broad theoretical and experimental foundation of the proposed method.

https://static-content.springer.com/image/art%3A10.1007%2Fs12274-009-9013-z/MediaObjects/12274_2009_9013_Fig1_HTML.jpg

Keywords

Nanonet Carbon nanotube flexible electronics thin film transistors

Copyright information

© Tsinghua University Press and Springer Berlin Heidelberg 2009