Research Article

Nano Research

, Volume 2, Issue 2, pp 167-175

First online:

Open Access This content is freely available online to anyone, anywhere at any time.

Theory and practice of “Striping” for improved ON/OFF Ratio in carbon nanonet thin film transistors

  • Ninad PimparkarAffiliated withSchool of Electrical and Computer Engineering, Purdue University
  • , Qing CaoAffiliated withDepartment of Chemistry, University of Illinois
  • , John A. RogersAffiliated withDepartment of Chemistry, University of IllinoisMaterials and Science Engineering, University of IllinoisElectrical and Computer Engineering, University of IllinoisBeckman Institute, University of IllinoisFrederick and Seitz Materials Res. Lab, University of Illinois Email author 
  • , Muhammad A. AlamAffiliated withSchool of Electrical and Computer Engineering, Purdue University Email author 


A new technique to reduce the influence of metallic carbon nanotubes (CNTs)—relevant for large-scale integrated circuits based on CNT-nanonet transistors—is proposed and verified. Historically, electrical and chemical filtering of the metallic CNTs have been used to improve the ON/OFF ratio of CNT-nanonet transistors; however, the corresponding degradation in ON-current has made these techniques somewhat unsatisfactory. Here, we abandon the classical approaches in favor of a new approach based on relocation of asymmetric percolation threshold of CNT-nanonet transistors by a technique called “striping”; this allows fabrication of transistors with ON/OFF ratio >1000 and ON-current degradation no more than a factor of 2. We offer first principle numerical models, experimental confirmation, and renormalization arguments to provide a broad theoretical and experimental foundation of the proposed method.


Nanonet Carbon nanotube flexible electronics thin film transistors