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Effects of thickness on electronic structure of titanium thin films

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Abstract

Effects of thickness on the electronic structure of e-beam evaporated thin titanium films were studied using near-edge X-ray absorption fine structure (NEXAFS) technique at titanium L 2,3 edge in total electron yield (TEY) mode and transmission yield mode. Thickness dependence of L 2,3 branching ratio (BR) of titanium was investigated and it was found that BR below 3·5 nm shows a strong dependence on film thickness. Mean electron escape depth (λ) in titanium, an important parameter for surface applications, was determined to be λ = 2·6 ± 0·1 nm using L 2,3 resonance intensity variation as a function of film thickness. The average L 3 /L 2 white line intensity ratio of titanium was obtained as 0·89 from the ratio of amplitudes of each L 3 and L 2 peaks and 0·66 from the integrated area under each L 3 and L 2 peaks. In addition, a theoretical calculation for pure titanium was presented for comparison with experimental data.

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Acknowledgements

The author is grateful to Profs Piero Pianetta, Herman Winick and staff at the Stanford Synchrotron Radiation Lightsource (SSRL) for their excellent support, where NEXAFS experiments have been carried out. (SSRL) is supported by the Department of Energy (DOE), Office of Basic Energy Science.

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  1. Bor Vocational School, Nigde University, 51700, Nigde, Turkey

    GÜVENÇ AKGÜL

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  1. GÜVENÇ AKGÜL
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AKGÜL, G. Effects of thickness on electronic structure of titanium thin films. Bull Mater Sci 37, 41–45 (2014). https://doi.org/10.1007/s12034-014-0623-z

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  • DOI: https://doi.org/10.1007/s12034-014-0623-z

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