Erratum to: Stem Cell Rev and Rep (2013) 9(2):190–209

DOI 10.1007/s12015-013-9429-4

In the original version of this paper, Anjamrooz focused on describing the cellular memory disc (CMD) of reprogrammed cells [1]. Based on the CMD theory, cellular memory includes three parts: a reprogramming-resistance memory (RRM), a switch-promoting memory (SPM) and a culture-induced memory (CIM). In the last sentence of the paper’s abstract, the author states that RRM, SPM and CIM arise genetically, epigenetically and non-genetically, respectively. However, based on the paper’s full text, especially the data in table 1, it is clear that the information is incorrect. Hence, in this erratum, the last abstract sentence is corrected to “Based on the present theory, cellular memory includes three parts: a reprogramming-resistance memory (RRM), a switch-promoting memory (SPM) and a culture-induced memory (CIM). The cellular memory arises genetically, epigenetically and non-genetically and affects cellular behaviours.” The original version of this paper was edited by Nature Publishing Group Language Editing prior to publication. The word “respectively,” which changed the meaning of the sentence substantially, was added to the sentence by language editors of NPG Language Editing. However, it is noted in the NPG Language Editing Editorial Certification that the author has the ability to accept or reject editors’ suggestions and changes. The author noticed this error after the paper had been published. Hence, this erratum aims to correct the error.

1. Anjamrooz, S.H. (2013). The cellular memory disc of reprogrammed cells. Stem Cell Reviews and Reports, 9(2), 190–209.