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Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In0.82Ga0.18As buffer layer

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Abstract

Microstructure and misfit dislocation behavior in In x Ga1-x As/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were analyzed by high resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and Hall effect measurements. To optimize the structure of In0.82Ga0.18As/InP heterostructure, the In x Ga1-x As buffer layer was grown. The residual strain of the In0.82Ga0.18As epitaxial layer was calculated. Further, the periodic growth pattern of the misfit dislocation at the interface was discovered and verified. Then the effects of misfit dislocation on the surface morphology and microstructure of the material were studied. It is found that the misfit dislocation of high indium (In) content In0.82Ga0.82As epitaxial layer has significant influence on the carrier concentration.

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Authors and Affiliations

  1. Key Laboratory of Automobile Materials of Ministry of Education of China, College of Materials Science and Engineering, Jilin University, Changchun, 130025, China

    Qiu-lin Wei  (魏秋林), Zuo-xing Guo  (郭作兴), Lei Zhao  (赵磊), Liang Zhao  (赵亮), De-zeng Yuan  (袁德增) & Mao-sheng Xia  (夏茂盛)

  2. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China

    Guo-qing Miao  (缪国庆)

Authors
  1. Qiu-lin Wei  (魏秋林)
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  2. Zuo-xing Guo  (郭作兴)
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  3. Lei Zhao  (赵磊)
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  4. Liang Zhao  (赵亮)
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  5. De-zeng Yuan  (袁德增)
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  6. Guo-qing Miao  (缪国庆)
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  7. Mao-sheng Xia  (夏茂盛)
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Corresponding author

Correspondence to Mao-sheng Xia  (夏茂盛).

Additional information

This work has been supported by the National Key Basic Research Program of China (No.2012CB619200), the National Natural Science Foundation of China (No.61474053), the State Key Laboratory for Mechanical Behavior of Materials of Xi'an Jiaotong University (No.20161806), and the Natural Science Basic Research Open Foundation of the Key Lab of Automobile Materials, Ministry of Education, Jilin University (No.1018320144001).

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Wei, Ql., Guo, Zx., Zhao, L. et al. Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In0.82Ga0.18As buffer layer. Optoelectron. Lett. 12, 441–445 (2016). https://doi.org/10.1007/s11801-016-6190-3

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  • DOI: https://doi.org/10.1007/s11801-016-6190-3

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