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Effect of electrochemical etching current on prepared perforated silicon structures for neutron detectors

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Abstract

Neutron detector based on perforated silicon structures backfilled with neutron converting materials could be operated at a low voltage and improves the detection efficiency of thermal neutron. It is found that the intrinsic detection efficiency of thermal neutron is affected by a lot of factors such as the geometry, size, and depth of the perforation and so on. In this study, the perforated silicon was prepared by electrochemical etching. Effect of etching current on geometry, size, and depth of the perforated silicon structures for neutron detectors was also reported.

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Authors and Affiliations

  1. Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang, 621900, China

    Xiao-Qiang Fan & Yong Jiang

  2. Key Laboratory of Radiation Physics and Technology (Ministry of Education), Institute of Nuclear Science and Technology, Sichuan University, Chengdu, 610064, China

    Chang-Yong Zhan, Yu Zou, Jian-Chun Wu & Ning-Kang Huang

Authors
  1. Xiao-Qiang Fan
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  2. Yong Jiang
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  3. Chang-Yong Zhan
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  4. Yu Zou
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  5. Jian-Chun Wu
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  6. Ning-Kang Huang
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Corresponding author

Correspondence to Chang-Yong Zhan.

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Fan, XQ., Jiang, Y., Zhan, CY. et al. Effect of electrochemical etching current on prepared perforated silicon structures for neutron detectors. Front. Mater. Sci. 7, 96–101 (2013). https://doi.org/10.1007/s11706-013-0197-5

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  • DOI: https://doi.org/10.1007/s11706-013-0197-5

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