Ray Tracing Simulation of Images of Dislocations and Inclusions on X-Ray Topographs of GaAs Epitaxial Wafers

Abstract

In x-ray topography studies, ray tracing simulation has been particularly useful in identifying and characterizing Burgers vectors of dislocations using only one reflection instead of the traditional method of recording at least three reflections and applying $\vec{g} \cdot \vec{b} = 0$ and $\vec{g} \cdot \vec{b} \times \vec{l} = 0$ criteria. In this study, ray tracing simulation of expected dislocations in (Al_xGa_(1–x))_0.5In_0.5P epitaxial layers on GaAs substrates has been carried out by using well-known expressions for displacement fields around dislocations. By comparing the simulated images with observed images on monochromatic x-ray topographs, the Burgers vectors have been characterized. The x-ray topographs from the (Al_xGa_(1–x))_0.5In_0.5P epitaxial layers also reveal a unique pattern consisting of a series of circular dark contrast features from inclusions. These dark circles decrease in size as the center of the inclusions is approached. Ray tracing simulated image of an inclusion assuming a spherical strain field matches well with the experimental image, thus providing information on the level of strain around the inclusion.