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Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN X Schottky Metal Structures for High-Power Applications

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Abstract

In this study, an Au-free AlGaN/GaN high-electron-mobility transistor (HEMT) with Ti/Al/W ohmic and WNx Schottky metal structures is fabricated and characterized. The device exhibits smooth surface morphology after metallization and shows excellent direct-current (DC) characteristics. The device also demonstrates better performance than the conventional HEMTs under high voltage stress. Furthermore, the Au-free AlGaN/GaN HEMT shows stable device performance after annealing at 400°C. Thus, the Ti/Al/W ohmic and WN X Schottky metals can be applied in the manufacturing of GaN HEMT to replace the Au based contacts to reduce the manufacturing costs of the GaN HEMT devices with comparable device performance.

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Acknowledgements

This work was sponsored by National Chung-Shan Institute of Science & Technology, Taiwan, under Grant No. NCSIST-102-V211(105) and TSMC, NCTU-UCB I-RiCE program, and Ministry of Science and Technology, Taiwan, under No. MOST 105-2911-I-009-301.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, 30010, Taiwan, ROC

    Ting-En Hsieh, Yueh-Chin Lin,  Yu-Lin Chuang & Edward Yi Chang

  2. Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, Taiwan, ROC

    Chung-Ming Chu & Wei-I Lee

  3. Institute of Photonic System, National Chiao-Tung University, Tainan, 71150, Taiwan, ROC

    Yu-Xiang Huang & Wang-Cheng Shi

  4. Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600, Bangi, Selangor, Malaysia

    Chang-Fu Dee & Burhanuddin Yeop Majlis

  5. Department of Electronics Engineering, National Chiao-Tung University, Hsinchu, 30010, Taiwan, ROC

    Edward Yi Chang

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  1. Ting-En Hsieh
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  2. Yueh-Chin Lin
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  3. Chung-Ming Chu
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  6. Wang-Cheng Shi
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  7. Chang-Fu Dee
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  8. Burhanuddin Yeop Majlis
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  9. Wei-I Lee
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  10. Edward Yi Chang
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Correspondence to Edward Yi Chang.

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Hsieh, TE., Lin, YC., Chu, CM. et al. Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN X Schottky Metal Structures for High-Power Applications. J. Electron. Mater. 45, 3285–3289 (2016). https://doi.org/10.1007/s11664-016-4534-1

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  • DOI: https://doi.org/10.1007/s11664-016-4534-1

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