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Effects of Ultrathin AlAs Interfacial Layer on Photoluminescence Properties of GaInP Epilayer Grown on Ge

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Abstract

The photoluminescence (PL) properties of a GaInP epilayer with an ultrathin AlAs interfacial layer grown on Ge were investigated by time-resolved photoluminescence spectroscopy and temperature-dependent PL spectroscopy. A double-exponential PL decay with two time constants was observed, where the fast component is attributed to the emission from ordered GaInP while the slow component is related to localized states. Increased thickness of the AlAs interfacial layer resulted in an increased PL decay time due to the increased degree of order of the GaInP. Furthermore, the broad PL peak around 1.57 eV appearing in the GaInP epilayer after insertion of the AlAs layer might be attributed to phosphorus-vacancy-related deep levels.

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Acknowledgements

This work is supported in part by the National Natural Science Foundation of China (Grant Nos. 61176128, 61376081, and 61534008), the National High Technology Research and Development Program of China (Grant Nos. 2013AA050403), the Application Foundation of Suzhou (Grant Nos. SYG201437), the Knowledge Innovation Project of the CAS and the SINANO Program (Grant Nos. Y2AAQ11004 and 07AA032002).

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Authors and Affiliations

  1. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China

    J. X. Chen, S. L. Lu, L. F. Bian & H. Yang

  2. Department of Teaching Basic Courses, The Chinese People’s Armed Police Force Academy, Langfang, 065000, Hebei Province, China

    W. He

  3. Key Laboratory for New Type of Functional Materials in Hebei Province, School of Material and Engineering, Hebei University of Technology, Tianjin, 300130, China

    S. P. Jia

  4. Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China

    D. S. Jiang

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  1. J. X. Chen
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  5. S. L. Lu
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Correspondence to S. L. Lu.

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Chen, J.X., He, W., Jia, S.P. et al. Effects of Ultrathin AlAs Interfacial Layer on Photoluminescence Properties of GaInP Epilayer Grown on Ge. J. Electron. Mater. 45, 853–858 (2016). https://doi.org/10.1007/s11664-015-4225-3

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  • DOI: https://doi.org/10.1007/s11664-015-4225-3

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