Abstract
Nonvolatile memory (NVM) devices based on a metal–insulator–metal structure consisting of CdSe/ZnS quantum dots embedded in polymethylsilsesquioxane dielectric layers were fabricated. The current–voltage (I–V) curves showed a bistable current behavior and the presence of hysteresis. The current–time (I–t) curves showed that the fabricated NVM memory devices were stable up to 1 × 104 s with a distinct ON/OFF ratio of 104 and were reprogrammable when the endurance test was performed. The extrapolation of the I–t curve to 105 s with corresponding current ON/OFF ratio 1 × 105 indicated a long performance stability of the NVM devices. Schottky emission, Poole–Frenkel emission, trapped-charge limited-current and Child–Langmuir law were proposed as the dominant conduction mechanisms for the fabricated NVM devices based on the obtained I–V characteristics.
Similar content being viewed by others
References
T.W. Kim, Y. Yang, F.S. Li, and W.L. Kwan, NPG Asia Mater. 4, e18 (2013).
S.K. Hong, J.E. Kim, S.O. Kim, S.Y. Choi, and B.J. Cho, IEEE Electron Device Lett. 31, 1005 (2010).
D.I. Son, D.H. Park, W.K. Choi, S.H. Cho, W.T. Kim, and T.W. Kim, Nanotechnology 20, 195203 (2009).
D.Y. Yun, J.K. Kwak, J.H. Jung, T.W. Kim, and D.I. Son, Appl. Phys. Lett. 95, 143301 (2009).
J.H. Jung, J.Y. Jin, I. Lee, T.W. Kim, H.G. Roh, and Y.H. Kim, Appl. Phys. Lett. 88, 112107 (2006).
P.C. Ooi, F. Li, C.P. Veeramalai, and T. Guo, Jpn. J. Appl. Phys. 53, 125001 (2014).
D. Kessler, C. Teutsch, and P. Theato, Macromol. Chem. Phys. 209, 1437 (2008).
R.H. Baney, M. Itoh, A. Sakakibara, and T. Suzuki, Chem. Rev. 95, 1409 (1995).
H.W. Ro, K.J. Kim, P. Theato, D.W. Gidley, and D.Y. Yoon, Macromolecules 38, 1031 (2005).
W.K. Lee, H.Y. Wong, and K.C. Aw, Microelectron. Eng. 88, 2837 (2011).
D.A. Loy and K.J. Shea, Chem. Rev. 95, 1431 (1995).
J. Veres, S.D. Ogier, S.W. Leeming, D.C. Cupertino, and S. Mohialdin, Khaffaf. Adv. Funct. Mater. 13, 199 (2003).
D.Y. Yun, H.M. Park, S.W. Kim, and T.W. Kim, Carbon 45, 244 (2014).
Y. Zhou, D.Y. Yun, S.W. Kim, and T.W. Kim, Appl. Phys. Lett. 105, 233303 (2014).
D.I. Son, J.H. Kim, D.H. Park, W.K. Choi, F. Li, J.H. Ham, and T.W. Kim, Nanotechnology 19, 055204 (2008).
R. Wargnier, A.V. Baranov, V.G. Maslov, V. Stsiapura, M. Artemyev, M. Pluot, A. Sukhanova, and I. Nabiev, Nano Lett. 4, 451 (2004).
P. Liu, Y. Wu, Y. Li, B.S. Ong, and S. Zhu, J. Am. Chem. Soc. 128, 4554 (2006).
P.C. Ooi, K.C. Aw, W. Gao, and K.A. Razak, Thin Solid Films 544, 597 (2013).
Z. Ahmad, P.C. Ooi, K.C. Aw, and M.H. Sayyad, Solid State Commun. 151, 297 (2011).
W.K. Lee, H.Y. Wong, and K.C. Aw, Solid State Commun. 151, 1541 (2011).
P.T. Liu, T.C. Chang, K.C. Hsu, T.Y. Tseng, L.M. Chen, C.J. Wang, and S.M. Sze, Thin Solid Films 414, 1 (2002).
P. Kumar, A. Misra, M.N. Kamalasanan, S.C. Jain, and V. Kumar, J. Phys. D 40, 561 (2007).
W. Brutting, S. Berleb, and A.G. Muckl, Synth. Met. 122, 99 (2001).
V. Kannan and J.K. Rhee, Appl. Phys. Lett. 99, 143504 (2011).
S. Kolliopoulou, P. Dimitrakis, P. Normand, H.L. Zhang, N. Cant, S.D. Evans, S. Paul, C. Pearson, A. Molloy, M.C. Petty, and D. Tsoukalas, J. Appl. Phys. 94, 5234 (2003).
I.S. Shin, J.M. Kim, J.H. Jeun, S.H. Yoo, Z.Y. Ge, J.I. Hong, J.H. Bang, and Y.S. Kim, Appl. Phys. Lett. 100, 183307 (2012).
A. Rose, Phys. Rev. 97, 1538 (1955).
Acknowledgement
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2013R1A2A 1A01016467).
Author information
Authors and Affiliations
Corresponding authors
Additional information
Zehao Ma and Poh Choon Ooi have contributed equally to this work.
Rights and permissions
About this article
Cite this article
Ma, Z., Ooi, P.C., Li, F. et al. Electrical Bistabilities and Conduction Mechanisms of Nonvolatile Memories Based on a Polymethylsilsesquioxane Insulating Layer Containing CdSe/ZnS Quantum Dots. J. Electron. Mater. 44, 3962–3966 (2015). https://doi.org/10.1007/s11664-015-3872-8
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-015-3872-8