Skip to main content
SpringerLink
Log in

Effect of InP Doping on the Phase Transition of Thin GeSbTe Films

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

We report the crystallization and phase-transition behavior of GeSbTe thin films doped with indium phosphorus (InP). Pure GeSbTe thin films and InP-doped GeSbTe thin films were prepared by use of an rf magnetron sputtering method. After thermal annealing, electrical and optical changes in the thin films were observed. Sheet resistance and reflectance measurements revealed that InP doping suppresses crystallization of GeSbTe. X-ray diffraction analysis confirmed that addition of In and P atoms inhibits the phase transition from face-centered cubic to hexagonal closed-packed. Nucleation of the doped GeSbTe thin films was delayed at an annealing temperature of 100°C; after thermal annealing, neither segregation nor formation of a secondary phase occurred. These results indicate that InP doping improves the amorphous stability of GeSbTe thin films. It is believed this enhanced amorphous stability is a result of the formation of multiple, strong crosslinks by the In and P atoms.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. M. Nardone, M. Simon, I.V. Karpov, and V.G. Karpov, J. Appl. Phys. 112, 071101 (2012).

    Article  Google Scholar 

  2. N. Yamada, MRS Bull. 21, 48 (1996).

    Google Scholar 

  3. K. Ren, F. Rao, Z. Song, S. Lv, Y. Cheng, L. Wu, C. Peng, X. Zhou, M. Xia, B. Liu, and S. Feng, Appl. Phys. Lett. 100, 052105 (2012).

    Article  Google Scholar 

  4. S.R. Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968).

    Article  Google Scholar 

  5. J.-B. Park, G.-S. Park, H.-S. Baik, J.-H. Lee, H. Jeong, and K. Kim, J. Electrochem. Soc. 154, H139 (2007).

    Article  Google Scholar 

  6. Q. Wang, H.J. Sun, J.J. Zhang, X.H. Xu, and X.S. Miao, J. Electron. Mater. 41, 3417 (2012).

    Article  Google Scholar 

  7. A.V. Kolobov, J. Tominaga, and J. Mater, Sci.-Mater. El. 14, 677 (2003).

    Article  Google Scholar 

  8. H. Horii, J.H. Yi, J.H. Park, Y.H. Ha, I.G. Baek, S.O. Park, Y.N. Hwang, S.H. Lee, Y.T. Kim, K.H. Lee, U.-I. Chung, and J.T. Moon (Symposium on VLSI Technology Digest of Technical Papers, 2003), pp. 177.

  9. K.-H. Kim, D.-J. Yun, Y.-K. Kyoung, D.-E. Yu, and S.-J. Choi, J. Electron. Mater. 43, 3082 (2014).

    Article  Google Scholar 

  10. M.H. Jang, S.J. Park, D.H. Lim, S.J. Park, and M.H. Cho, Appl. Phys. Lett. 96, 092108 (2010).

    Article  Google Scholar 

  11. T.H. Jeong, H. Seo, K.L. Lee, S.M. Choi, S.J. Kim, and S.Y. Kim, Jpn. J. Appl. Phys. 40, 1609 (2001).

    Article  Google Scholar 

  12. Y. Jiang, L. Xu, J. Chen, R. Zhang, W. Su, Y. Yu, Z. Ma, and J. Xu, Phys. Status Solidi A 210, 2231 (2013).

    Article  Google Scholar 

  13. L. Tong, L. Xu, Y. Jiang, F. Yang, L. Geng, J. Xu, W. Su, Z. Ma, and K. Chen, J. Non-Cryst. Solids 358, 2402 (2012).

    Article  Google Scholar 

  14. K.H. Song, S.W. Kim, J.H. Seo, and H.Y. Lee, J. Appl. Phys. 104, 103516 (2008).

    Article  Google Scholar 

  15. K. Wang, D. Wamwangi, S. Ziegler, C. Steimer, and M. Wuttig, J. Appl. Phys. 96, 5557 (2004).

    Article  Google Scholar 

  16. K. Wang, C. Steimer, D. Wamwangi, S. Ziegler, and M. Wuttig, Appl. Phys. A 80, 1611 (2005).

    Article  Google Scholar 

  17. Y.J. Huang, M.C. Tsai, C.H. Wang, and T.E. Hsieh, Thin Solid Films 520, 3692 (2012).

    Article  Google Scholar 

  18. S.W. Ryu, Y.B. Ahn, J.H. Lee, and H.J. Kim, J. Semicond. Technol. Sci. 11, 146 (2011).

    Article  Google Scholar 

  19. T. Morikawa, K. Akita, T. Ohyanagi, M. Kitamura, M. Kinoshita, M. Tai, and N. Takaura (IEEE International Electron Devices Meeting (IEDM), 2012), pp. 31.4.1–31.4.4.

  20. A.M. Mio, G. D’Arrigo, E. Carria, C. Bongiorno, S. Rossini, C. Spinella, M.G. Grimaldi, and E. Rimini, Electrochem. Solid-State Lett. 15, H105 (2012).

    Article  Google Scholar 

  21. Y. Yin and S. Hosaka, Jpn. J. Appl. Phys. 51, 104202 (2012).

    Article  Google Scholar 

  22. M. Anbarasu, M. Wimmer, G. Bruns, M. Salinga, and M. Wuttig, Appl. Phys. Lett. 100, 143505 (2012).

    Article  Google Scholar 

  23. T. Lowrey, W. Parkinson, and G. Wicker, US Patent US 8379439 B2 (2013).

  24. Z. Yang and P. Lucasw, J. Am. Ceram. Soc. 92, 2920 (2009).

    Article  Google Scholar 

  25. N. Manikandan and S. Asokan, J. Phys. Condens. Matter 19, 376104 (2007).

    Article  Google Scholar 

  26. S. Prakash, S. Asokan, and D.B. Ghare, IEEE Electron. Dev. Lett. 18, 45 (1997).

    Article  Google Scholar 

  27. D.A. Glocker and S.I. Shah, Handbook of Thin Film Process Technology (London: Institute of Physics, 1995), p. A3.0.11.

  28. S.-Y. Lee, S.-H. Choi, and C.-O. Park, Thin Solid Films 359, 261 (2000).

    Article  Google Scholar 

  29. I. Friedrich, V. Weidenhof, W. Njoroge, P. Franz, and M. Wuttig, J. Appl. Phys. 87, 4130 (2000).

    Article  Google Scholar 

  30. S.O. Ryu, S.M. Yoon, K.J. Choi, N.Y. Lee, Y.S. Park, S.Y. Lee, B.G. Yu, J.B. Park, and W.C. Shin, J. Electrochem. Soc. 153, G234 (2006).

    Article  Google Scholar 

  31. S. Raoux and M. Wuttig, Phase-change materials Science and Applications (New York: Spring, 2009), p. 187.

  32. N. Kato, I. Konomi, Y. Seno, and T. Motohiro, Appl. Surf. Sci. 244, 281 (2005).

    Article  Google Scholar 

  33. Y. Choi, M. Jung, and Y.-K. Lee, Electrochem. Solid-State Lett. 12, F17 (2009).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Applied Materials Engineering, Hanbat National University, Daejeon, 305-719, Korea

    Ki Su Bang, Yong Jun Oh & Seung-Yun Lee

Authors
  1. Ki Su Bang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Yong Jun Oh
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Seung-Yun Lee
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Seung-Yun Lee.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Bang, K.S., Oh, Y.J. & Lee, SY. Effect of InP Doping on the Phase Transition of Thin GeSbTe Films. J. Electron. Mater. 44, 2712–2718 (2015). https://doi.org/10.1007/s11664-015-3734-4

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-015-3734-4

Keywords

Search

Navigation