Skip to main content
Log in

Electrical Conduction Mechanisms in Metal–Insulator–Metal (MIM) Structure with TiO x N y Thin Films Deposited with Different O/N Ratios

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

In this work, the current–voltage characteristics of titanium oxynitride thin films were measured and the charge carrier transport mechanisms established as a function of film composition. The films were deposited by magnetron sputtering, where the oxygen/nitrogen ratio was varied via a pulsing technique to enable the achievement of desired concentrations. Thus, the obtained films showed metallic titanium nitrate (TiN) or semiconductor titanium dioxide (TiO2) character and were used to fabricate metal–insulator–metal structures. An ohmic conduction mechanism was identified in the films with higher nitrogen incorporation or presenting TiN-rich phase. Decrease in the nitrogen content resulted in films with TiO2-rich phase. In this case, Poole–Frenkel and space-charge-limited current conduction mechanisms were observed. The dielectric constants were calculated from the high-frequency capacitance–voltage dependences, with a reduction from 10 to 3 being observed due to the stoichiometric changes and probable incorporation of defects into the film structure. Finally, the film composition and structural characteristics of the films were revealed by Rutherford backscattering and x-ray diffraction techniques, respectively.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. H.-S.P. Wong, IBM J. Res. Dev. 46, 133 (2002).

    Article  Google Scholar 

  2. B. Magyari-Köpe, M. Tendulkar, S. Park, H.D. Lee, and Y. Nishi, Nanotechnology 22, 254029 (2011).

    Article  Google Scholar 

  3. R. Asahi, T. Morikawa, T. Ohwaki, K. Aoki, and Y. Taga, Science 293, 269 (2001).

    Article  Google Scholar 

  4. W.D. Brown and W.W. Grannemann, Thin Solid Films 51, 119 (1978).

    Article  Google Scholar 

  5. A. Maurya, P. Chauhana, S.K. Mishrab, and R.K. Srivastavab, J. Alloys Compd. 509, 8433 (2011).

    Article  Google Scholar 

  6. T.W. Hickmott, J. Appl. Phys. 87, 7903 (2000).

    Article  Google Scholar 

  7. O. Mitrofanov and M. Manfra, J. Appl. Phys. 95, 6414 (2004).

    Article  Google Scholar 

  8. K.C. Kao, Dielectric Phenomena in Solids, 1st edn. (San Diego: Elsevier Academic, 2004), pp. 345

  9. G.G. Raju, Dielectrics in Electric Fields, 1st edn. (New York: Marcel Dekker, 2003), pp. 356

  10. P. Barquinha, L. Pereira, H. Aguas, E. Fortunato, and R. Martins, Mater. Sci. Semicond. Process. 7, 244 (2004).

    Google Scholar 

  11. N. Martin, J. Lintymer, J. Gavoille, J.M. Chappé, F. Sthal, J. Takadoum, F. Vaz, and L. Rebouta, Surf. Coat. Technol. 201, 7720 (2007).

    Article  Google Scholar 

  12. J. Chappé, N. Martin, J. Lintymer, F. Sthal, G. Terwagne, and J. Takadouma, Appl. Surf. Sci. 253, 5312 (2007).

    Article  Google Scholar 

  13. S. Boukrouh, R. Bensaha, S. Bourgeois, E. Finot, and M.C. Marco de Lucas, Thin Solid Films 516, 6353 (2008).

    Article  Google Scholar 

  14. C. Vallée, P. Gonon, C. Jorel, F. El Kamel, M. Mougenot, and V. Jousseaume, Microelectron. Eng. 86, 1774 (2009).

    Article  Google Scholar 

  15. R.D. Gould and M.G. Lopez, Thin Solid Films 433, 315 (2003).

    Article  Google Scholar 

  16. E. Hourdakis and A.G. Nassiopoulou, Microelectron. Eng. 90, 12 (2012).

    Article  Google Scholar 

  17. P.V. Aleskandrovaa, V.K. Gueorguiev, Tz.E Ivanov, and J.B. Koprinarova, Eur. Phys. J. B 52, 453 (2006).

    Article  Google Scholar 

  18. D.J. Harra, J. Vac. Sci. Technol. 13, 471 (1976).

    Article  Google Scholar 

  19. X.-G. Zang and S.T. Pantelides, Phys. Rev. Lett. 108, 266602 (2012).

    Article  Google Scholar 

Download references

Acknowledgements

The authors acknowledge financial support from The State of São Paulo Research Foundation (FAPESP) Project 2010/11294-7. Also, CAPES/PVE (Project BEX 9796/12-6), CAPES/PVNS, CAPES (02765/098), and the Associated Laboratory of Sensors and Materials (LAS-INPE), the Laboratory of Integrated Systems (LSI-USP), the Laboratory for Material Analysis with Ion Beams (LAMFI-USP), and the Laboratory for Characterization of Semiconductor Devices (LCDS-IEAv) are highly acknowledged.

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Juliano Libardi.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Libardi, J., Grigorov, K.G., Moraes, R.S. et al. Electrical Conduction Mechanisms in Metal–Insulator–Metal (MIM) Structure with TiO x N y Thin Films Deposited with Different O/N Ratios. J. Electron. Mater. 44, 103–109 (2015). https://doi.org/10.1007/s11664-014-3470-1

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-014-3470-1

Keywords

Navigation