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Effects of Crystal Growth Methods on Deep-Level Defects and Electrical Properties of CdZnTe:In Crystals

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Deep-level defects in CdZnTe:In (CZT) crystals grown by the modified vertical Bridgman (MVB) method and the traveling heater method (THM) were comparatively studied by thermally stimulated current (TSC) measurements. The trap density of Cd vacancy-related acceptor defects is found to be lower in THM-grown crystals compared with crystals grown by the MVB method, since the relatively low growth temperature of the THM will greatly reduce the loss of Cd and decrease the generation of Cd vacancies. Tellurium antisite-related deep donors are dominant in MVB-grown CZT, and Te interstitial-related deep acceptors are dominant in THM-grown CZT crystals grown by the Te-rich solution technique. The compensation of donor and acceptor defects leads to a low concentration of net free electrons in n-type MVB-grown CZT and a relatively high concentration of net free holes in p-type THM-grown CZT. The Fermi level in MVB-grown CZT is positioned below the conduction band by the antisite-related deep donor, while that in THM-grown CZT is positioned above the valence band by the interstitial-related deep acceptor.

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Acknowledgements

This work was supported by the Special Fund of National Key Scientific Instruments and Equipments Development (2011YQ040082), the National 973 Project of China (2011CB610400), the 111 Project of China (B08040), the National Natural Science Foundation of China (NNSFC-61274081, 51372205), the Doctorate Foundation of Northwestern Polytechnical University (CX201102), and Ministry of Education Fund for Doctoral Students Newcomer Awards of China. The authors would like to give special thanks to Dr. Nianxia Cao at Syracuse University for great help during paper writing.

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  1. State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xiʼan, 710072, Shaanxi, China

    Lingyan Xu, Wanqi Jie, Boru Zhou, Xu Fu, Gangqiang Zha, Tao Wang, Yadong Xu, Tao Feng & Xi Chen

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  1. Lingyan Xu
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  2. Wanqi Jie
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  8. Tao Feng
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Correspondence to Wanqi Jie or Gangqiang Zha.

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Xu, L., Jie, W., Zhou, B. et al. Effects of Crystal Growth Methods on Deep-Level Defects and Electrical Properties of CdZnTe:In Crystals. J. Electron. Mater. 44, 518–523 (2015). https://doi.org/10.1007/s11664-014-3452-3

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