Abstract
APEI has developed high-performance electronics to exploit the unique capabilities of wide-bandgap devices. Crucial enabling features include high current density, fast switching speed, high-voltage (>10 kV) blocking, high-temperature operation (>200°C), and inherent radiation tolerance, features which have the potential to completely revolutionize existing electronics, from milliwatt to megawatt levels, and enable operation in new environments. Full realization of these extraordinary capabilities led to significant challenges in package and system design, including high electric fields, high power density, high di/dt’s and dv/dt’s, and high temperatures. Because of the limitations of traditional design methods and traditional electronics, designers unknowingly lack understanding of packaging material thermal properties at temperature extremes, of package-fabrication techniques, and of the inability to operate continuously at elevated temperatures, and use a set of qualification standards designed for lower-temperature, previous generation technology.
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L.M. Tolbert, T.J. King, B. Ozpineci, J.B. Campbell, G. Muralidharan, D.T. Rizy, A.S. Sabau, H. Zhang, W. Zhang, Y. Xu, H.F. Huq, and H. Liu, Power Electronics for Distributed Energy Systems and Transmission and Distribution Applications: Assessing the Technical Needs for Utility Applications (Oak Ridge, TN: Oak Ridge National Laboratory, 2005), https://www.smartgrid.gov/document/power_ele ctronics_distributed_energy_systems_and_transmission_ and_distribution_applications. Accessed 24 Jan 2014.
B. Whitaker, A. Barkley, Z. Cole, B. Passmore, T.R. McNutt, A.B. Lostetter, J.S. Lee, and K. Shiozaki, IEEE Trans. Power Electron. 29, 2606 (2014).
J.A. Cooper Jr., 2004 IEEE Aerospace Conference, vol. 4 (March, 2004), pp. 2507–2514.
M. Mermet-Guyennet, A. Castellazzi, J. Fabre, and P. Ladoux, 2012 7th International Conference on Integrated Power Electronics Systems (CIPS) (March 2012), pp. 1, 6
B. McPherson, B. Passmore, P. Killeen, D. Martin, A. Barkley, and T. McNutt, IMAPS 46th International Symposium on Microelectronics, Orlando, FL (Oct 3 2013).
Y. Nakano, R. Nakamura, H. Sakairi, S. Mitani, and T. Nakamura, International Conference on Silicon Carbide and Related Materials, Cleveland, Ohio (2011)
GaN Systems Inc., http://www.gansystems.com. Accessed 24 Jan 2014.
R. Shaw, P. Doyle, J. Hornberger, A. Lostetter, B. McPherson, H. Procell, and R. Schupbach, International Conference on High Temperature Electronics (HiTEC 2012), Albuquerque, New Mexico (May 08 2012).
T.G. Lei, J.N. Calata, K.D.T. Ngo, and G.G. Lu, IEEE Trans. Dev. Mater. Reliab. 9, 563 (2009).
B. Ozpineci and L.M. Tolbert, Technical Report ORNL/ TM-2003/257, Oak Ridge National Laboratory/UT-Battelle, LLC (December 12, 2003), http://web.ornl.gov/∼webworks/ cppr/y2001/rpt/118817.pdf. Accessed 24 Jan 2014
D. Shaddock, L. Meyer, J. Tucker, S. Dasgupta, and R. Fillion, Proceedings of the 19th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (March 2003), p. 42.
P. Neudeck, NASA Silicon Carbide Electronics website, http://www.grc.nasa.gov/WWW/SiC. Accessed 24 Jan 2014.
J. Richmond, L. Cheng, A. Agarwal, and J. Palmour, Proceedings of IMAPS High Temperature Electronics Conference (HiTEC) (May 2012).
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McNutt, T., Passmore, B., Fraley, J. et al. High-Performance, Wide-Bandgap Power Electronics. J. Electron. Mater. 43, 4552–4559 (2014). https://doi.org/10.1007/s11664-014-3376-y
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DOI: https://doi.org/10.1007/s11664-014-3376-y