Abstract
In x Al1−x N alloys with low indium content (0.025 < x < 0.080) were grown on Si(111) substrates, with an AlN buffer layer, using gas source molecular beam epitaxy with ammonia under nitrogen-rich conditions. Composition was varied by changing the growth temperature from 580°C to 660°C. Growth temperature in excess of 580°C was found to be necessary to obtain compositional uniformity. As temperature was varied from 590°C to 660°C, both the growth rate and indium incorporation decreased substantially. Rising In content observed near the surface of each sample was attributed to native indium oxide formation.
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M. Higashiwaki and T. Matsui, Jpn. J. Appl. Phys. 43, L768 (2004).
J. Xue, Y. Hao, J. Zhang, X. Zhou, Z. Liu, J. Ma, and Z. Lin, Appl. Phys. Lett. 98, 113504 (2011).
A. Castiglia, E. Feltin, G. Cosendey, A. Altoukhov, J.F. Carlin, R. Butté, and N. Grandjean, Appl. Phys. Lett. 94, 193506 (2009).
S. Choi, H.J. Kim, S.S. Kim, J. Liu, J. Kim, J.H. Ryou, R.D. Dupuis, A.M. Fischer, and F.A. Ponce, Appl. Phys. Lett. 96, 221105 (2010).
J.F. Carlin, J. Dorsaz, E. Feltin, R. Butté, N. Grandjean, M. Ilegems, and M. Laügt, Appl. Phys. Lett. 86, 031107 (2005).
H. He, Y. Cao, R. Fu, H. Wang, J. Huang, C. Huang, M. Wang, and Z. Deng, J. Mater. Sci. Mater. Electron. 21, 676 (2010).
W. Terashima, S.B. Che, Y. Ishitani, and A. Yoshikawa, Jpn. J. Appl. Phys. 45, L539 (2006).
S.L. Sahonta, G.P. Dimitrakopulos, T. Kehagias, J. Kioseoglou, A. Adikimenakis, E. Ilipoulos, A. Georgakilas, H. Kirmse, W. Neumann, and P. Komninou, Appl. Phys. Lett. 95, 021913 (2009).
T.T. Kang, M. Yamamoto, M. Tanaka, A. Hashimoto, and A. Yamamoto, J. Appl. Phys. 106, 053525 (2009).
V. Darakchieva, M. Beckers, M.Y. Xie, L. Hultman, B. Monemar, J.F. Carlin, E. Feltin, M. Gonschorek, and N. Grandjean, J. Appl. Phys. 103, 103513 (2008).
C. Hums, J. Bläsing, A. Dadgar, A. Diez, T. Hempel, J. Christen, A. Krost, K. Lorenz, and E. Alves, Appl. Phys. Lett. 90, 022105 (2007).
Q. Han, C. Duan, G. Du, W. Shi, and L. Ji, J. Electron. Mater. 39, 5 (2010).
S. Iwata, Y. Nanjo, T. Okuno, S. Kurai, and T. Taguchi, Jpn. J. Appl. Phys. 46, 3394 (2007).
G. Guryanov, T.P.S. Clair, R. Bhat, C. Caneau, S. Nikishin, B. Borisov, and A. Budrevich, Appl. Surf. Sci. 252, 7208 (2006).
S.A. Nikishin, V.G. Antipov, S. Francoeur, N.N. Faleev, G.A. Seryogin, V.A. Elyukhin, H. Temkin, T.I. Prokofyeva, M. Holtz, A. Konkar, and S. Zollner, Appl. Phys. Lett. 75, 4 (1999).
V. Mansurov, X. Xu, M. Pandikunta, R. Uddin, and S. Nikishin, J. Vac. Sci. Technol. B 29, 03C129 (2011).
Z.Y. Wang, B.M. Shi, Y. Cai, N. Wang, and M.H. Xie, J. Appl. Phys. 108, 033503 (2010).
S. Zhang, B. Liu, J.Y. Yin, H.H. Sun, Z.H. Feng, and L.C. Zhao, J. Phys. D Appl. Phys. 44, 075405 (2011).
M. Holtz, T. Prokofyeva, M. Seon, K. Copeland, J. Vanbuskirk, S. Williams, S.A. Nikishin, V. Tretyakov, and H. Temkin, J. Appl. Phys. 89, 7977 (2001).
K.S. Kim, A. Saxler, P. Kung, M. Razeghi, and K.Y. Lim, Appl. Phys. Lett. 71, 800 (1997).
R.R. Pelá, C. Caetano, M. Marques, L.G. Ferreira, J. Furthmüller, and L.K. Tales, Appl. Phys. Lett. 98, 151907 (2011).
V.A. Elyukhin, G.G. Salgado, R.P. Sierra, and S.A. Nikishin, J. Appl. Phys. 93, 5185 (2003).
S.Yu. Karpov, Yu.N. Makarov, and M.S. Ramm, MRS Internet J. Nitride Semicond. Res. 2, article 45 (1997).
S.T. Liu, X.Q. Wang, G. Chen, Y.W. Zhang, L. Feng, C.C. Huang, F.J. Xu, N. Tang, L.W. Sang, M. Sumiya, and B. Shen, J. Appl. Phys. 110, 113514 (2011).
M. Mesrine, N. Grandjean, and J. Massies, Appl. Phys. Lett. 72, 350 (1998).
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Uddin, M.R., Pandikunta, M., Mansurov, V. et al. Effects of Growth Temperature on Indium Incorporation in InAlN Alloys Grown by GSMBE on Si(111). J. Electron. Mater. 41, 824–829 (2012). https://doi.org/10.1007/s11664-012-1967-z
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DOI: https://doi.org/10.1007/s11664-012-1967-z