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Aluminum Gallium Nitride Alloys Grown via Metalorganic Vapor-Phase Epitaxy Using a Digital Growth Technique

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This work investigates the use of a digital growth technique as a viable method for achieving high-quality aluminum gallium nitride (Al x Ga1−x N) films via metalorganic vapor-phase epitaxy. Digital alloys are superlattice structures with period thicknesses of a few monolayers. Alloys with an AlN mole fraction ranging from 0.1 to 0.9 were grown by adjusting the thickness of the AlN layer in the superlattice. High-resolution x-ray diffraction was used to determine the superlattice period and c-lattice parameter of the structure, while reciprocal-space mapping was used to determine the a-lattice parameter and evaluate growth coherency. A comparison of the measured lattice parameter with both the nominal value and also the underlying buffer layer is discussed.

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  1. Lane Department of Computer Science and Electrical Engineering, West Virginia University, PO Box 6109, Morgantown, WV, 26506, USA

    L. E. Rodak & D. Korakakis

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  1. L. E. Rodak
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  2. D. Korakakis
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Correspondence to L. E. Rodak.

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Rodak, L.E., Korakakis, D. Aluminum Gallium Nitride Alloys Grown via Metalorganic Vapor-Phase Epitaxy Using a Digital Growth Technique. J. Electron. Mater. 40, 388–393 (2011). https://doi.org/10.1007/s11664-010-1455-2

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  • DOI: https://doi.org/10.1007/s11664-010-1455-2

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