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Evaluation of Stress and Crystal Quality in Si During Shallow Trench Isolation by UV-Raman Spectroscopy

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Abstract

Defects and stress gradually accumulate throughout various Si large-scale integration fabrication processes. It is essential to monitor defects and stress carefully to suppress their unintentional introduction. In this study, we measured the stress and crystal quality in shallow trench isolation (STI) samples by ultraviolet (UV)-Raman spectroscopy with an extremely high-resolution wavenumber to evaluate the effect of post-annealing on the recovery of Si crystals. The variations of crystal quality in 200-mm wafers with STI structures gradually decreased after post-annealing for 4 h, 6 h, and 8 h; however, there was no substantial difference in the values of full-width at half-maximum of the Raman spectra. Precise measurements of variations of stress and crystal quality were successfully performed by UV-Raman spectroscopy with a high-resolution wavenumber, which enabled us to evaluate the STI process accurately.

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Acknowledgements

This study was partially supported by a Grant-in-Aid for Scientific Research on Priority Areas from the Ministry of Education, Culture, Sports, Science, and Technology (MEXT: 19026013), and performed as a shuttle service of the Semiconductor Technology Academic Research Center (STARC).

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Authors and Affiliations

  1. School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, 214-8571, Japan

    Daisuke Kosemura, Maki Hattori, Tetsuya Yoshida & Atsushi Ogura

  2. OKI Semiconductor Co., Ltd., 550-1 Higashiasakawa-cho, Hachiouji-shi, Tokyo, 193-8850, Japan

    Toshikazu Mizukoshi

  3. Research Fellow of the Japan Society for the Promotion of Science, 8 Ichiban-cho, Chiyoda-ku, Tokyo, 102-8472, Japan

    Daisuke Kosemura

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  1. Daisuke Kosemura
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  2. Maki Hattori
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  3. Tetsuya Yoshida
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  4. Toshikazu Mizukoshi
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  5. Atsushi Ogura
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Correspondence to Daisuke Kosemura.

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Kosemura, D., Hattori, M., Yoshida, T. et al. Evaluation of Stress and Crystal Quality in Si During Shallow Trench Isolation by UV-Raman Spectroscopy. J. Electron. Mater. 39, 694–699 (2010). https://doi.org/10.1007/s11664-010-1148-x

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  • DOI: https://doi.org/10.1007/s11664-010-1148-x

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