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Characterization of CdTe and HgCdTe by Photo-Thermal Excitation Spectroscopy

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We report an infrared photo-thermal excitation imaging and spectroscopy study of CdTe and CdZnTe substrates as well as HgCdTe/CdZnTe and HgCdTe/Si epilayers. The applicability, advantages, and limitations of the technique as a tool for both ex situ and in situ monitoring of bandgap, thickness, and growth temperature are discussed. We show that photo-thermal imaging allows for direct visual imaging of the bandgap region of CdTe and CdZnTe substrates. We also show that photo-thermal spectroscopy can provide epilayer thickness information independent of the dielectric function. The method is orthogonal to existing optical characterization techniques and could be combined with them for improved accuracy.

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Acknowledgements

The authors gratefully acknowledge support from ONR/NRL. The authors would also like to thank G. Brill (Army Research Laboratory) and F. Aqariden (DRS Infrared Technologies) for providing the samples and B. Higgins (NRL) for help with the polymer solution. This research was performed while R. Furstenberg held a National Research Council Research Associateship Award at the US Naval Research Laboratory.

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  1. U.S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC, 20375, USA

    Robert Furstenberg, Michael R. Papantonakis & C.A. Kendziora

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  1. Robert Furstenberg
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  2. Michael R. Papantonakis
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  3. C.A. Kendziora
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Correspondence to C.A. Kendziora.

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Furstenberg, R., Papantonakis, M.R. & Kendziora, C. Characterization of CdTe and HgCdTe by Photo-Thermal Excitation Spectroscopy. J. Electron. Mater. 38, 1533–1538 (2009). https://doi.org/10.1007/s11664-009-0696-4

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  • DOI: https://doi.org/10.1007/s11664-009-0696-4

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