Journal of Electronic Materials

, Volume 38, Issue 4, pp 586–595

Intrinsic and Doped Zinc Oxide Nanowires for Transparent Electrode Fabrication via Low-Temperature Solution Synthesis

Authors

    • Department of Materials Science and EngineeringStanford University
  • R. Noriega
    • Department of Applied PhysicsStanford University
  • M. Donovan
    • Department of Applied PhysicsStanford University
  • J. Jokisaari
    • School of Materials Science and EngineeringClemson University
  • G. Kusinski
    • School of Materials Science and EngineeringClemson University
  • A. Salleo
    • Department of Materials Science and EngineeringStanford University

DOI: 10.1007/s11664-008-0618-x

Undoped and doped zinc oxide (ZnO) nanowires were synthesized by decomposing metal salts in trioctylamine at 300°C. By adding metal salts during the formation of the wires, effective incorporation of Ga and Al up to 5% was achieved, as measured by energy-dispersive x-ray spectroscopy and Auger electron spectroscopy. No secondary phase was detected by high-resolution transmission electron microscopy and x-ray diffraction. The nanowires were single-crystalline with a wurtzite lattice structure. Films made with doped wires show a complex dependence of the sheet resistance on processing conditions and dopant concentration. Thermal annealing treatment reduced the sheet resistance to values of 103 Ω/square.

Keywords

Zinc oxide nanowire transparent electrode doping

Copyright information

© TMS 2008