Article

Journal of Electronic Materials

, Volume 38, Issue 4, pp 586-595

Open Access This content is freely available online to anyone, anywhere at any time.

Intrinsic and Doped Zinc Oxide Nanowires for Transparent Electrode Fabrication via Low-Temperature Solution Synthesis

  • L. GorisAffiliated withDepartment of Materials Science and Engineering, Stanford University Email author 
  • , R. NoriegaAffiliated withDepartment of Applied Physics, Stanford University
  • , M. DonovanAffiliated withDepartment of Applied Physics, Stanford University
  • , J. JokisaariAffiliated withSchool of Materials Science and Engineering, Clemson University
  • , G. KusinskiAffiliated withSchool of Materials Science and Engineering, Clemson University
  • , A. SalleoAffiliated withDepartment of Materials Science and Engineering, Stanford University

Undoped and doped zinc oxide (ZnO) nanowires were synthesized by decomposing metal salts in trioctylamine at 300°C. By adding metal salts during the formation of the wires, effective incorporation of Ga and Al up to 5% was achieved, as measured by energy-dispersive x-ray spectroscopy and Auger electron spectroscopy. No secondary phase was detected by high-resolution transmission electron microscopy and x-ray diffraction. The nanowires were single-crystalline with a wurtzite lattice structure. Films made with doped wires show a complex dependence of the sheet resistance on processing conditions and dopant concentration. Thermal annealing treatment reduced the sheet resistance to values of 103 Ω/square.

Keywords

Zinc oxide nanowire transparent electrode doping