Abstract
The fabrication of HgCdTe photodiodes using plasma-induced p-to-n type conversion for junction formation shows promise in improving array uniformity and device yields in comparison to more traditional fabrication technologies. Previously, characterization and analysis of the diode current-voltage (I–V) characteristics of fabricated devices have given indications that surface-leakage current mechanisms are limiting device performance. To further investigate the effectiveness of the surface passivation employed in the fabrication process, gated-diode structures have been fabricated. The gated-diode structure enables the semiconductor surface potential to be varied, thus allowing the characteristics of surface-leakage currents and their effect on device performance to be evaluated. The long wavelength infrared (LWIR) HgCdTe gated photodiodes used in this study have been characterized using I–V measurements for variable gate-bias voltage and variable temperature. Analysis of the experimental results indicates that plasma-induced type conversion produces an n (lightly doped)-on-p junction that is highly susceptible to a trapped positive charge in the passivation layer, which results in increased surface-tunneling currents. Modeling of the various dark-current mechanisms is used to show the effect on dark-current generation of the surface band bending induced by variations in surface potential. In addition, temperature-dependent I–V measurements and analysis have also been conducted.
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Nguyen, T., Musca, C.A., Dell, J.M. et al. Dark currents in long wavelength infrared HgCdTe gated photodiodes. J. Electron. Mater. 33, 621–629 (2004). https://doi.org/10.1007/s11664-004-0057-2
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DOI: https://doi.org/10.1007/s11664-004-0057-2