Journal of Electronic Materials

, Volume 29, Issue 3, pp 252–255

Piezoelectric polarization in the radiative centers of GaInN/GaN quantum wells and devices

  • C. Wetzel
  • T. Detchprohm
  • T. Takeuchi
  • H. Amano
  • I. Akasaki
Special Issue Paper

DOI: 10.1007/s11664-000-0058-8

Cite this article as:
Wetzel, C., Detchprohm, T., Takeuchi, T. et al. Journal of Elec Materi (2000) 29: 252. doi:10.1007/s11664-000-0058-8

Abstract

We identify, quantify, and correlate the polarization dipole across the well of device-typical piezoelectric GaInN/GaN heterostructures with the luminescence properties of the well. This quantity reflects in the asymmetry of the barrier height on either side of the well. By a detailed comparison of photoreflection, electroreflection, low and high excitation density photoluminescence we find that a very similar splitting occurs in the emission characteristics of the well. We therefore conclude that the electronic band structure within the wells is also to a very large extent controlled by the quantity of the polarization dipole in such polarization heterostructures.

Key words

GaInN/GaN quantum well polarization bandstructure luminescence reflectance level splitting 

Copyright information

© TMS-The Minerals, Metals and Materials Society 2000

Authors and Affiliations

  • C. Wetzel
    • 1
  • T. Detchprohm
    • 1
  • T. Takeuchi
    • 1
    • 2
  • H. Amano
    • 1
    • 2
  • I. Akasaki
    • 1
    • 2
  1. 1.High Tech Research CenterMeijo UniversityNagoyaJapan
  2. 2.Department of Electrical and Electronic EngineeringMeijo UniversityNagoyaJapan

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