Piezoelectric polarization in the radiative centers of GaInN/GaN quantum wells and devices
- Cite this article as:
- Wetzel, C., Detchprohm, T., Takeuchi, T. et al. Journal of Elec Materi (2000) 29: 252. doi:10.1007/s11664-000-0058-8
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We identify, quantify, and correlate the polarization dipole across the well of device-typical piezoelectric GaInN/GaN heterostructures with the luminescence properties of the well. This quantity reflects in the asymmetry of the barrier height on either side of the well. By a detailed comparison of photoreflection, electroreflection, low and high excitation density photoluminescence we find that a very similar splitting occurs in the emission characteristics of the well. We therefore conclude that the electronic band structure within the wells is also to a very large extent controlled by the quantity of the polarization dipole in such polarization heterostructures.