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Investigation of Source-Based Scratch Formation During Oxide Chemical Mechanical Planarization

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Abstract

The formation of scratches on silicon dioxide surfaces during chemical mechanical planarization in the semiconductor manufacturing process is a significant concern, as it adversely affects yield and reliability. In this study, scratch formation during CMP processing of the oxide surface was examined. The shapes of the resulting scratches were classified into three types: chatter mark type, line type, and rolling type. Chatter mark types were further subdivided into line chatter, broken chatter, and group chatter based on the shape. The effect of three different scratch sources (viz., pad debris, dried particles, and diamond particles) on scratch formation was comprehensively investigated. Chatter-mark-type scratches are predominant in the presence of agglomerated particles and pad debris. Group chatter marks are caused by the addition of pad debris. Unique scratch formation was observed on the wafer with different scratch sources. In particular, multiple-line-type scratches were observed in the presence of diamond particles.

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Acknowledgments

This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2008-0061862) and an international cooperation program managed by the National Research Foundation of Korea (2012-0006294). We are grateful to Dow Electronic Materials, Cheil Industries, and Shinhan Diamond Corporation for providing pads, slurry, and diamond conditioners, respectively.

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Authors and Affiliations

  1. Department of Materials Engineering, Hanyang University, Ansan, 426-791, South Korea

    Tae-Young Kwon, Manivannan Ramachandran & Jin-Goo Park

  2. Department of Bionano Technology, Hanyang University, Ansan, 426-791, South Korea

    Byoung-Jun Cho & Jin-Goo Park

  3. Center for Microcontamination Control, Northeastern University, Boston, MA, 02115, USA

    Ahmed A. Busnaina

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  1. Tae-Young Kwon
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  2. Byoung-Jun Cho
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  3. Manivannan Ramachandran
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  4. Ahmed A. Busnaina
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  5. Jin-Goo Park
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Correspondence to Jin-Goo Park.

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Kwon, TY., Cho, BJ., Ramachandran, M. et al. Investigation of Source-Based Scratch Formation During Oxide Chemical Mechanical Planarization. Tribol Lett 50, 169–175 (2013). https://doi.org/10.1007/s11249-012-0098-2

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  • DOI: https://doi.org/10.1007/s11249-012-0098-2

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