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Structural Properties of Silicon Carbide Nano Structures Grown on Quartz Substrate Using CVD Method

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Theoretical and Experimental Chemistry Aims and scope

An Erratum to this article was published on 01 July 2017

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Silicon carbide (SiC) nanostructures were obtained by the chemical deposition of hexamethyldisiloxane (C6H18OSi2) from the vapor phase onto quartz with a supported cobalt catalyst. A study was carried out on the structural and optical properties of the SiC nanostructures obtained at 650, 700, 750, and 800 °C using scanning electron microscopy, XRD, and electron spectroscopy. All the films were found to have crystalline structure. The optical transmittance in the visible region increases with increasing synthesis temperature.

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  • 14 August 2017

    An erratum to this article has been published.

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Authors and Affiliations

  1. Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, P. O. Box 14665-678, Tehran, Iran

    A. Mahmoodi, M. Ghoranneviss & Kh. Mehrani

Authors
  1. A. Mahmoodi
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  2. M. Ghoranneviss
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  3. Kh. Mehrani
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Correspondence to A. Mahmoodi.

Additional information

Translated from Teoreticheskaya i Éksperimental’naya Khimiya, Vol. 52, No. 4, pp. 256-261, July-August, 2016.

An erratum to this article is available at https://doi.org/10.1007/s11237-017-9518-6.

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Mahmoodi, A., Ghoranneviss, M. & Mehrani, K. Structural Properties of Silicon Carbide Nano Structures Grown on Quartz Substrate Using CVD Method. Theor Exp Chem 52, 259–264 (2016). https://doi.org/10.1007/s11237-016-9477-3

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  • DOI: https://doi.org/10.1007/s11237-016-9477-3

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