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Circuit model of uni-traveling carrier photodiode with high power and enhanced bandwidth technique

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Abstract

An electrical equivalent circuit model of InGaAs/InP uni-travelling carrier photodiode (UTC-PD) is presented. The model is suitable to be built on any electrical circuit simulator to optimize the design parameters of the device. Its performance in terms of bandwidth, linearity, third order inter-modulation distortion and output photo current are investigated. Simulation techniques to measure inter-modulation distortion products and linearity are given in detail. The result obtained by the modeling technique is validated through a comparison with the reported experimental results. It is shown that 3 dB cutoff frequency and output photocurrent can be substantially improved by inserting a small inductance in series with the load together with choosing an optimum absorption layer width in UTC-PD. This technique does not sacrifice the device linearity to a large extent.

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Acknowledgments

The work is undertaken as part of Information Technology Research Academy (ITRA), Media Lab Asia project entitled “Mobile Broadband Service Support over Cognitive Radio Networks”.

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Authors and Affiliations

  1. Institute of Radio Physics and Electronics, University of Calcutta, 92, Acharya Prafulla Chandra Road, Kolkata, 700009, W.B., India

    Senjuti Khanra & Abhirup Das Barman

  2. ITRA project “Mobile Broadband Service Support over Cognitive Radio Networks”, IRPE-CU, Kolkata, India

    Senjuti Khanra & Abhirup Das Barman

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  1. Senjuti Khanra
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  2. Abhirup Das Barman
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Correspondence to Abhirup Das Barman.

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Khanra, S., Barman, A.D. Circuit model of uni-traveling carrier photodiode with high power and enhanced bandwidth technique. Opt Quant Electron 47, 1397–1405 (2015). https://doi.org/10.1007/s11082-014-0094-x

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  • DOI: https://doi.org/10.1007/s11082-014-0094-x

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