Abstract
A ridge-type semiconductor laser with horizontal coupling of lateral modes is proposed, and lasing characteristics are simulated. A groove is formed in the center of the mesa, and the lateral modes of the laser beams are determined by the coupling of the lateral modes confined by the two ridges, which are formed in the mesa. With an increase in the depth of the groove, light output operating in the fundamental lateral mode is enhanced and threshold current is decreased. When the depth of the groove is \(1.2\,\upmu \hbox {m}\) and the width of the groove is \(<\)1.98 \(\upmu \hbox {m}\), the kink does not appear up to the injected current of 2 A.
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This research was partially supported by the Japan Society for Science, Grant-in-Aid for Scientific Research (C) 24560429, 2013.
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Chai, G., Numai, T. Simulation of a ridge-type semiconductor laser with horizontal coupling of lateral modes. Opt Quant Electron 46, 1217–1223 (2014). https://doi.org/10.1007/s11082-013-9821-y
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DOI: https://doi.org/10.1007/s11082-013-9821-y