Journal of Nanoparticle Research

, 15:1458

Mild-temperature synthesis and first-principle fluorescence simulation of GaN nanoparticles

Authors

  • Nai-Feng Zhuang
    • College of Chemistry and Chemical EngineeringFuzhou University
  • Xing Wang
    • College of Chemistry and Chemical EngineeringFuzhou University
  • Fei Fei
    • College of Chemistry and Chemical EngineeringFuzhou University
  • Chun-Chen Liu
    • College of Chemistry and Chemical EngineeringFuzhou University
  • Lin Wei
    • College of Chemistry and Chemical EngineeringFuzhou University
  • Yong-Fan Zhang
    • College of Chemistry and Chemical EngineeringFuzhou University
    • College of Chemistry and Chemical EngineeringFuzhou University
    • College of Chemistry and Chemical EngineeringFuzhou University
Research Paper

DOI: 10.1007/s11051-013-1458-z

Cite this article as:
Zhuang, N., Wang, X., Fei, F. et al. J Nanopart Res (2013) 15: 1458. doi:10.1007/s11051-013-1458-z

Abstract

In this paper, GaN nanoparticles were synthesized from the complex Ga(H2NCONH2)6Cl3 in the flow of NH3 at a mild temperature (350 °C). Further purification was performed by the ethanol-thermal method. The ethanol-thermal method also prompted the GaN nanoparticles to grow into an anisotropic morphology. XRD patterns reveal that GaN nanoparticles have crystallized in a hexagonal wurtzite structure. TEM observation shows that the average size of the as-prepared nanoparticles is about 5–10 nm. The photoluminescence spectrum exhibits a broad green emission band with a peak at 510 nm. It can be known from the first-principle theoretic simulation by the TDDFT method that this fluorescence emission band is attributed to the hydride defects of VN-H on the surface of GaN nanoparticles.

Keywords

Nanoparticle synthesisGallium nitrideOptical semiconductor materialPhotoluminescenceTDDFT

Copyright information

© Springer Science+Business Media Dordrecht 2013