Abstract
The effects of the top barrier and the dot density on photoluminescence (PL) of the InAs quantum dots (QDs) sandwiched by the graded InxGa1−xAs barriers grown by metal-organic vapor phase epitaxy (MOVPE) have been studied. Two emission peaks corresponding to the ground state and the 1st excited state transitions of the QD structures have been observed, which matches well to the theoretical calculation. The PL emission linewidth and intensity of the InAs QDs structure are improved by reducing the Indium/Gallium composition variation of the graded InxGa1−xAs top barrier layer of the structure. The QDs’ ground states filling excitation power depends on the crystal quality of the InGaAs barrier layer and the QD density. The extracted thermal activation energy for the QDs’ PL emission is sensitive to the QD size.
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Acknowledgment
This research is sponsored by the Science and Engineering Research Council (SERC) of Agency for Science, Technology & Research (A*STAR), Singapore (SERC Grant No. 052 101 0105), and the Academic Research Fund (Grant No. RGM 23/06) from the Mistry of Education of Singapore.
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Yin, Z., Tang, X., Zhang, J. et al. Photoluminescence of InAs quantum dots embedded in graded InGaAs barriers. J Nanopart Res 11, 1947–1955 (2009). https://doi.org/10.1007/s11051-008-9551-4
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DOI: https://doi.org/10.1007/s11051-008-9551-4