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Investigation of electrical properties in La-doped BiFeO3–PbTiO3 thin films prepared by sol–gel method

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Abstract

La-modified thin films of multiferroic 0.7(Bi1−x La x )FeO3–0.3PbTiO3 (BFPT, x = 0, 0.01, 0.03, 0.05 and 0.1) solid solution were prepared by sol–gel method. Perovskite BFPT single-phase thin films were successfully synthesized at 600 °C by optimizing several preparation conditions. It was confirmed from X-ray diffraction that BFPT films tend to display sharper peaks with the La concentration, which could be attributed to the changes in grain size and the promotion of La doping in the crystallization. The dielectric constant ε r also showed a significant increase as compared to those of the undoped BFPT thin films. Furthermore, substitution of small amount of La atoms in BFPT films was effective in reducing leakage current and improving the ferroelectric behavior at a low electric field, which may strongly associated with the grain size and the domain wall density. The P r and E c values of 5 mol% La-doped BFPT thin films at room temperature were approximately 23 µC/cm2 and 80 kV/cm, indicating the potential applications of BFPT thin films in non-volatile ferroelectric memory fields.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grant No. 51302163) and the Innovational Foundation of Shanghai University (Grant No. K.10-0110-13-009).

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Authors and Affiliations

  1. School of Materials Science and Engineering, Shanghai University, Shanghai, 200072, People’s Republic of China

    Dongfang Chen, Shengli Huang, Jianguo Chen & Jinrong Cheng

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  1. Dongfang Chen
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  2. Shengli Huang
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  3. Jianguo Chen
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  4. Jinrong Cheng
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Correspondence to Jinrong Cheng.

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Chen, D., Huang, S., Chen, J. et al. Investigation of electrical properties in La-doped BiFeO3–PbTiO3 thin films prepared by sol–gel method. J Sol-Gel Sci Technol 76, 220–226 (2015). https://doi.org/10.1007/s10971-015-3769-2

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