Abstract
The ab initio calculations, based on the Korringa-Kohn-Rostoker method combined with the coherent potential approximation (KKR-CPA), were used to investigate the electronic structure and magnetic properties of F-doped SnO2 and Sn0.98Mn0.02 O 2 systems. We discuss in particular the fluorine interstitial (F i ), oxygen interstitial (O i ), and oxygen vacancy (VO) defects. Our investigation confirms the n-type conductivity for SnO2(1−x) F 2x . The new finding is Sn0.98Mn0.02 O 1.95 F 0.05system could induce the ferromagnetic (FM) stability instead of the disordered local moment (DLM) and shows the half metallic characteristic. Since the majority-spin related to \(\mathrm {e}_{\mathrm {g}}^{\mathrm {+}}\) is located around the Fermi level. For Sn0.98Mn0.02 O 2 system, the exchange splitting between \(\mathrm {e}_{\mathrm {g}}^{\mathrm {+}}\) and \(\mathrm {e}_{\mathrm {g}}^{\mathrm {-}}\) states is larger than the crystal field splitting between eg and t2g states. For Sn0.98Mn0.02 O 1.95 F 0.05 compared to Sn0.98Mn0.02 O 2, the exchange splitting has increased and the total magnetic moment augmented due to fluorine impurity.
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The authors would like to thank the CNRST/MAGRID www.magrid.ma service for their support in the calculation modeling part of this work.
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Ziat, Y., Slassi, A., Zarhri, Z. et al. First-Principles Study of Magnetic and Electronic Properties of Fluorine-Doped Sn 0 . 9 8 Mn 0 . 0 2 O 2 System. J Supercond Nov Magn 29, 2979–2985 (2016). https://doi.org/10.1007/s10948-016-3609-9
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DOI: https://doi.org/10.1007/s10948-016-3609-9