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A Comparison of the Effects of Sm and Pb Doping in Bi4O4S3 Superconductor

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Abstract

The effects of isovalent Sm doping and bivalent Pb doping at the Bi site on the superconductivity of Bi4O4S3 superconductor are studied and compared. It is found that the bivalent Pb doping results in much faster decrease of superconducting transition temperature and upper critical field, compared with the isovalent Sm doping. Hall effect measurements suggest that bivalent Pb doping gives rise to rapid decrease in electron-like charge carrier concentration. Our results indicate that the bivalent Pb ions not only act as the impurity scatterers but also introduce hole-type charge carriers, which is harmful to the superconductivity in Bi4O4S3 system.

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Acknowledgments

This work was supported by the State Key Project of Fundamental Research of China (Grant Nos. 2010CB923403 and 2011CBA00111) and the Natural Science Foundation of China (Grant Nos. 11174290 and U1232142).

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Authors and Affiliations

  1. High Magnetic Field Laboratory, Chinese Academy of Sciences and University of Science and Technology of China, Hefei, 230026, People’s Republic of China

    Xiong Yao, Jifeng Shao, Zhongheng Liu, Lei Zhang, Changjin Zhang & Yuheng Zhang

  2. Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, People’s Republic of China

    Xiong Yao, Jifeng Shao, Zhongheng Liu, Shun Tan, Changjin Zhang & Yuheng Zhang

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  1. Xiong Yao
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  2. Jifeng Shao
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  3. Zhongheng Liu
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  4. Lei Zhang
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  5. Shun Tan
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  6. Changjin Zhang
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  7. Yuheng Zhang
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Correspondence to Changjin Zhang.

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Yao, X., Shao, J., Liu, Z. et al. A Comparison of the Effects of Sm and Pb Doping in Bi4O4S3 Superconductor. J Supercond Nov Magn 27, 2555–2562 (2014). https://doi.org/10.1007/s10948-014-2624-y

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  • DOI: https://doi.org/10.1007/s10948-014-2624-y

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