Abstract
The effect of annealing temperature on the dielectric and magnetic properties of (Co, Zn) co-doped SnO2 nanoparticles under air/oxygen (O2) and argon (Ar) atmospheres at 600 °C have been systematically investigated. A significant decrease is observed in dielectric constant and dielectric loss resulting from the incorporation of Co and Zn into the SnO2 lattice. Higher dielectric constant and loss was observed in the O2 annealed sample. Moreover, the electrical conductivity of the (Co, Zn) co-doped SnO2 samples increased in comparison with that of pure SnO2 sample due to the increase of available charge carriers after replacement of Sn ions with Co and Zn ions. Room-temperature ferromagnetism (RTFM) was observed for both the O2 and Ar annealed (Co, Zn) co-doped SnO2 samples. However, the remanent magnetization (Mr) varied drastically for different environmental annealing processes with Mr = 0.412 and 0.20 memu/g for the O2 and Ar-annealed samples, respectively. The results show that the enhanced dielectric and magnetic properties of (Co, Zn) co-doped SnO2 sample is strongly correlated with the increase in O2 vacancies. These findings not only demonstrate that (Co, Zn) co-doped SnO2 samples show tunable RTFM, but also suggests that RTFM can be influenced by introduction of O2 vacancies during O2 annealing.
Similar content being viewed by others
References
H. Ohno, Making nonmagnetic semiconductors ferromagnetic. Science 281, 951–956 (1998)
T. Dietl, A ten-year perspective on dilute magnetic semiconductors and oxides. Nat. Mater. 9, 965–974 (2010)
T. Dietl, H. Ohno, F. Matsukura, J. Cibert, D. Ferrand, Zener model description of ferromagnetism in zinc-blende magnetic semiconductors. Science 287, 1019–1022 (2000)
I. Zutic, J. Fabian, S. Das Sarma, Spintronics: fundamentals and Applications. Rev. Mod. Phys. 76, 323–410 (2004)
H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, Y. Iye, (Ga, Mn)As: a new diluted magnetic semiconductor based on GaAs. Appl. Phys. Lett. 69, 363 (1996)
P. Sharma, A. Gupta, R.V. Rao, F.J. Owens, R. Sharma, R. Ahuja, J.M.O. Guillen, B. Johansson, G.A. Gehring, Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO. Nat. Mater. 2, 673 (2003)
S.B. Ogale, R.J. Choudhary, J.P. Buban, S.E. Lofland, S.R. Shinde, S.N. Kale, V.N. Kulkarni, J. Higgins, C. Lanci, J.R. Simpson, N.D. Browning, S. Das Sarma, H.D. Drew, R.L. Greene, T. Venkatesan, High temperature ferromagnetism with a giant magnetic moment in transparent Co-doped SnO2. Phys. Rev. Lett. 91, 77205 (2003)
S.R. Shinde, S.B. Ogale, J.S. Higgins, H. Zheng, A.J. Millis, V.N. Kulkarni, R. Ramesh, R.L. Greene, T. Venkatesan, Phys. Rev. Lett. 92, 166601 (2004)
R. Janisch, P. Gopal, N.A. Spaldin, Transition metal-doped TiO2 and ZnO present status of the field. J. Phys. Condens. Matter 17, R657 (2005)
D. Manikandan, R. Murugan, Room temperature dilute magnetism in nanoscale Co and Zn co-doped SnO2. Superlattices Microstruct. 89, 7–14 (2016)
R. Khan, Zulfiqar, Y. Zaman, Effect of annealing on structural, dielectric, transport and magnetic properties of (Zn, Co) co-doped SnO2 nanoparticles. J. Mater. Sci. Mater. Electron. 27, 4003–4010 (2016)
R. Khan, Zulfiqar, S. Fashu, Y. Zaman, Magnetic and dielectric properties of (Co, Zn) co-doped SnO2 diluted magnetic semiconducting nanoparticles. J. Mater. Sci. Mater. Electron. 27, 5960–5966 (2016)
P.D. Borges, L.M. Scolfaro, H.W. Alves, E.F. da Silva Jr., L.V. Assali, Study of the oxygen vacancy influence on magnetic properties of Fe- and Co-doped SnO2 diluted alloys. Nanoscale Res. Lett. 7, 540 (2012)
S. Chen, X. Zhao, H.H. Xie, J. Liu, L. Duan, X. Ba, J. Zha, Photoluminescence of undoped and Ce-doped SnO2 thin films deposited by sol–gel-dip-coating method. Appl. Surf. Sci. 258, 3255–3259 (2012)
H.M. Chenari, M.M. Golzan, H. Sedghi, A. Hassanzadeh, M. Talebian, Frequency dependence of dielectric properties and electrical conductivity of Cu/nano-SnO2 thick film/Cu arrangement. Curr. Appl. Phys. 11, 1071–1076 (2011)
R. Khan, Zulfiqar, S. Fashu, M.U. Rahman, Effects of Ni co-doping concentrations on dielectric and magneticproperties of (Co, Ni) co-doped SnO2 nanoparticles. J. Mater. Sci. Mater. Electron. (2016). doi:10.1007/s10854-016-4759-z
J.G. Han, Z.Y. Zhu, S. Ray, A.K. Azad, W.L. Zhang, M.X. He, S.H. Li, Y.P. Zhao, Optical and dielectric properties of ZnO tetrapod structures at terahertz frequencies. Appl. Phys. Lett. 89, 031107 (2006)
R. Khan, M.U. Zulfiqar, Z.U. Rahman, S.Fashu Rehman, Effect of air annealing on the structure, dielectric and magnetic properties of (Co, Ni) co-doped SnO2 nanoparticles. J. Mater. Sci. Mater. Electron. (2016). doi:10.1007/s10854-016-5144-7
P.S. Szu, Y.C. Lin, AC impedance studies of copper doped silica glass. Phys. Chem. Mater. 82, 295–300 (2003)
O. Pakma, N. Serinl, T. Serin, S. Altında, Influence of frequency and bias voltage on dielectric properties and electrical conductivityof Al/TiO2/p-Si/p? (MOS) structures. J. Phys. D Appl. Phys. 41, 215103 (2008)
C.H. Ho, C.D. Liu, C.H. Hsieh, K.H. Hsieh, S.N. Lee, High dielectric constant polyaniline/poly(acrylic acid) composites prepared by in situ polymerization. Synth. Met. 158, 630–637 (2008)
S. Mehraj, M.S. Ansari, A.A. Al-Ghamdi, Alimuddin, Annealing dependent oxygen vacancies in SnO2 nanoparticles: structural, electrical and their ferromagnetic behavior. Mater. Chem. Phys. 171, 109–118 (2016)
H.S. Hsu, J.C.A. Huang, Y.H. Huang, Y.F. Liao, M.Z. Lin, C.H. Lee, J.F. Lee, S.F. Chen, L.Y. Lai, C.P. Liu, Evidence of oxygen vacancy enhanced room-temperature ferromagnetism in Co-doped ZnO. Appl. Phys. Lett. 88, 242507 (2006)
G.S. Chang, J. Forrest, E.Z. Kurmaev, A.N. Morozovska, M.D. Glinchuk, J.A. McLeod, A. Moewes, T.P. Surkova, N.H. Hong, Oxygen vacancy induced ferromagnetism in un doped SnO2 films. Phys. Rev. B 85, 165319 (2012)
J. Hays, A. Punnoose, A.M.H. Engelhard, J. Peloquin, K.M. Reddy, Relationship between the structural and magnetic properties of Co-doped SnO2 nanoparticles. Phys. Rev. B 72, 075203 (2005)
Acknowledgments
Rajwali Khan and Zulfiqar would like thankful to the department of Physics, Material Science and Engineering Zhejiang University China, Abdul Wali Khan University Mardan Pakistan, and Harare Institute of Technology, Harare, Zimbabwe for providing experimental facilities. Finally, special thanks to the Chinese Government Scholarship for their financial support.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Khan, R., Zulfiqar, Rahman, MU. et al. Effect of annealing temperature on the dielectric and magnetic response of (Co, Zn) co-doped SnO2 nanoparticles. J Mater Sci: Mater Electron 28, 2673–2679 (2017). https://doi.org/10.1007/s10854-016-5844-z
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-016-5844-z