Skip to main content
SpringerLink
Log in

High quality InP epilayers grown on GaAs substrates using metamorphic AlGaInAs buffers by metalorganic chemical vapor deposition

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

Using compositionally step graded metamorphic AlGaInAs buffers with a thickness of 2.4 μm, we grow InP epilayers on GaAs substrates with miscuts of 2°, 7°, and 15° toward (111)A by metalorganic chemical vapor deposition. The InP top layer is almost strain-free and its quality depends on the substrate miscut. Strong phase separation in AlGaInAs buffers is observed in the 2° sample, while it is suppressed in 15° sample. Finally, a higher crystalline quality InP epilayer with a root-mean-square roughness of 10.1 nm is obtained on 15° substrate as confirmed by a much stronger photoluminescence peak intensity of the InP epilayer on 15° substrate compared with those on 2° and 7° substrates. Growth of high quality InP on GaAs opens up the possibility of integrating GaAs and InP based devices, and will greatly enhance the functionality of devices grown on GaAs substrates.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4

Similar content being viewed by others

References

  1. N. Hayafuji, T. Kimura, N. Yoshida, N. Kaneno, M. Tsugami, K. Mizuguchi, T. Murotani, S. Ibuki, Jpn. J. Appl. Phys. 28, L1721 (1989)

    Article  Google Scholar 

  2. C.I. Liao, K.F. Yarn, C.L. Lin, Y.L. Lin, Y.H. Wang, Jpn. J. Appl. Phys. 42, 4913 (2003)

    Article  Google Scholar 

  3. P.A. Postigo, F. Suárez, A. Sanz-Hervás, J. Sangrador, C.G. Fonstad, J. Appl. Phys. 103, 013508 (2008)

    Article  Google Scholar 

  4. Y.R. Sun, K.L. Li, J.R. Dong, X.L. Zeng, Y.M. Zhao, S.Z. Yu, C.Y. Zhao, H. Yang, J. Cryst. Growth 381, 70 (2013)

    Article  Google Scholar 

  5. H. Choi, Y. Jeong, J. Cho, M.H. Jeon, J. Cryst. Growth 311, 1091 (2009)

    Article  Google Scholar 

  6. N.J. Quitoriano, E.A. Fitzgerald, J. Appl. Phys. 102, 033511 (2007)

    Article  Google Scholar 

  7. L. Yang, M.T. Bulsara, K.E. Lee, E.A. Fitzgerald, J. Cryst. Growth 324, 103 (2011)

    Article  Google Scholar 

  8. H.Q. Nguyen, E.Y. Chang, H.W. Yu, K.L. Lin, C.C. Chung, Appl. Phys. Express 4, 075501 (2011)

    Article  Google Scholar 

  9. R.S. Goldman, H.H. Wieder, K.L. Kavanagh, Appl. Phys. Lett. 67, 344 (1995)

    Article  Google Scholar 

  10. I. Yonenaga, K. Sumino, J. Cryst. Growth 126, 19 (1993)

    Article  Google Scholar 

  11. M.J. Matragrano, D.G. Ast, J.R. Shealy, V. Krishnamoorthy, J. Appl. Phys. 79, 8371 (1996)

    Article  Google Scholar 

  12. R.S. Goldman, K.L. Kavanagh, H.H. Wieder, S.N. Ehrlich, R.M. Feenstra, J. Appl. Phys. 83, 5137 (1998)

    Article  Google Scholar 

  13. H. Chen, Y.K. Li, C.S. Peng, H.F. Liu, Y.L. Liu, Q. Huang, J.M. Zhou, Q.-K. Xue, Phys. Rev. B 65, 233303 (2002)

    Article  Google Scholar 

  14. N.J. Quitoriano, E.A. Fitzgerald, J. Appl. Phys. 101, 073509 (2007)

    Article  Google Scholar 

  15. S.B. Samavedam, E.A. Fitzgerald, J. Appl. Phys. 81, 3108 (1997)

    Article  Google Scholar 

  16. S.N.G. Chu, S. Nakahara, K.E. Strege, J.W.D. Johnston, J. Appl. Phys. 57, 4610 (1985)

    Article  Google Scholar 

  17. K.E. Lee, E.A. Fitzgerald, J. Cryst. Growth 312, 250 (2010)

    Article  Google Scholar 

  18. Z. Zhang, S. Yang, F. Zhang, D. Li, Y. Chen, Z. Wang, J. Cryst. Growth 243, 71 (2002)

    Article  Google Scholar 

Download references

Acknowledgments

This work is financially supported by the National Natural Science Foundation of China under Contract No. 61376065 and the Suzhou Science and Technology Project under Contract No. ZXG2013044.

Author information

Authors and Affiliations

  1. Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou, 215123, China

    Yurun Sun, Jianrong Dong, Shuzhen Yu, Yongming Zhao & Yang He

  2. University of Chinese Academy of Sciences, Beijing, 100049, China

    Yongming Zhao & Yang He

Authors
  1. Yurun Sun
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Jianrong Dong
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Shuzhen Yu
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Yongming Zhao
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Yang He
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Jianrong Dong.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Sun, Y., Dong, J., Yu, S. et al. High quality InP epilayers grown on GaAs substrates using metamorphic AlGaInAs buffers by metalorganic chemical vapor deposition. J Mater Sci: Mater Electron 28, 745–749 (2017). https://doi.org/10.1007/s10854-016-5585-z

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-016-5585-z

Keywords

Search

Navigation