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Improved performance of perovskite solar cell by controlling CH3NH3PbI3−xClx film morphology with CH3NH3Cl-assisted method

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Abstract

Sequential deposition solution-based method has been widely used for the fabrication of perovskite solar cells (PSCs). However, there is still a challenge to achieve homogeneous and consecutive surface of the perovskite layers. In this work, CH3NH3PbI3−xClx layers were prepared by a modified two-step solution method. Specifically, the optimum amount of CH3NH3Cl pre-added into PbI2 precursor solution, the appropriate size of pinholes and voids appear in PbI2 films and leave room for the growth of CH3NH3PbI3−xClx crystal. Under this condition, the crystal grains size is diminished and the surface coverage ratio of CH3NH3PbI3−xClx film is enhanced, which prevent the combination of electron-hole pairs on the interface between perovskite layer and TiO2 substrate. By varying the CH3NH3Cl amounts, the PSC devices displayed the highest power conversion efficiency of 13 %, which was obviously higher than that of the one prepared via transitional routes (10.32 %). As a result, we developed a simple and repeatable route for controllable synthesis of perovskite absorption layers, which is demonstrated to be effective to improve the performance of PSCs.

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Acknowledgments

This work is financially supported by the Fundamental Research Funds for the Central Universities (2015XKZD01).

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Authors and Affiliations

  1. School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou, 221116, China

    B. G. Zhao, L. Zhu, Y. L. Zhao, Y. Yang, J. Song, X. Q. Gu, Z. Xing & Y. H. Qiang

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  1. B. G. Zhao
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  2. L. Zhu
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  3. Y. L. Zhao
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  4. Y. Yang
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  5. J. Song
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  6. X. Q. Gu
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  7. Z. Xing
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  8. Y. H. Qiang
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Correspondence to L. Zhu or Y. H. Qiang.

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Zhao, B.G., Zhu, L., Zhao, Y.L. et al. Improved performance of perovskite solar cell by controlling CH3NH3PbI3−xClx film morphology with CH3NH3Cl-assisted method. J Mater Sci: Mater Electron 27, 10869–10876 (2016). https://doi.org/10.1007/s10854-016-5196-8

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  • DOI: https://doi.org/10.1007/s10854-016-5196-8

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